CY7C1625KV18-333BZXC

Memory IC Overview

The CY7C1625KV18 is a 144-Mbit QDR II SRAM organized as 16M x 9. It features separate independent read and write data ports supporting concurrent transactions. The device operates with a maximum clock frequency of 360 MHz, enabling double data rate (DDR) interfaces on both ports for data transfer at 720 MHz. It utilizes two input clocks (K and K) for precise DDR timing and includes echo clocks (CQ and CQ) to simplify data capture in high-speed systems. The memory array uses a single multiplexed address input bus latched for both read and write operations.

Memory IC Feature Summary

• Supports concurrent read and write transactions through separate independent data ports
• Features a two-word burst architecture on all accesses to maximize bandwidth
• Includes echo clocks (CQ and CQ) synchronized to output clocks to minimize skew and flight time mismatches
• Provides programmable impedance matching via the ZQ pin for system bus compatibility

Memory IC Applications

• High-bandwidth networking equipment requiring low-latency packet buffering
• Telecommunications infrastructure utilizing QDR II interface protocols
• System-on-chip designs needing synchronous pipelined SRAM with depth expansion capabilities

Memory IC Procurement Notes

Verify that the specific ordering suffix matches the required package type and lead-free status, as Infineon continues to support existing part numbers from the original Cypress development. Confirm supply continuity within the Infineon portfolio, noting that document content remains unchanged despite the corporate transition. Ensure compatibility with existing design-in documentation referencing the original Cypress branding.

Memory IC Selection Notes

Select this component for applications requiring independent read and write ports to eliminate data bus turnaround delays. The CY7C1625KV18 offers a 16M x 9 organization suitable for width expansion or specific word-length requirements compared to the 8M x 18 or 4M x 36 variants. Consider the 360 MHz maximum operating frequency when designing clock distribution networks to ensure signal integrity across the 165-ball FBGA package.

Memory IC Part Context

This device belongs to the CY7C16xxKV18 family of 144-Mbit QDR II SRAMs developed by Cypress Semiconductor and now offered by Infineon Technologies. The family includes the CY7C1612KV18 (8M x 18) and CY7C1614KV18 (4M x 36), sharing identical pinouts and functional architectures. All variants utilize the same 165-ball fine-pitch ball grid array package and support similar voltage and timing specifications.

Memory IC Replacement Considerations

CY7C1612KV18-360BZXC

Memory IC FAQ

How does the DOFF pin affect read latency?

When the DOFF pin is asserted high, the device operates with a 1.5-cycle read latency. When DOFF is asserted low or connected to ground, the PLL is disabled, and the device behaves in QDR I mode with a 1-cycle read latency.

What is the function of the ZQ pin?

The ZQ pin is used for output impedance matching. An external resistor (RQ) connects between ZQ and ground to tune the device outputs to the system data bus impedance, typically set to 0.2 times the line impedance.