CY7C1668KV18-450BZXC

Memory IC Overview

The CY7C1668KV18-450BZXC is a 144-Mbit DDR II+ synchronous pipelined SRAM organized as 8 M × 18. It supports a maximum operating frequency of 450 MHz with a two-word burst architecture and 2.5-cycle read latency when the DOFF pin is asserted HIGH. The device utilizes double data rate interfaces transferring data at 900 MHz. It operates with a core voltage of 1.8 V ± 0.1 V and I/O supply ranging from 1.4 V to VDD. The component is housed in a 165-ball fine pitch ball grid array (FBGA) package measuring 15 × 17 × 1.4 mm.

Memory IC Feature Summary

• DDR II+ architecture with two-word burst capability for reduced address bus frequency
• Echo clocks (CQ/CQ) and valid data indicator (QVLD) simplify high-speed data capture
• Synchronous internally self-timed writes with byte write select functionality
• Programmable output impedance via ZQ pin for system bus matching

Memory IC Applications

• High-bandwidth networking equipment requiring low-latency memory access
• Telecommunications infrastructure systems utilizing parallel interface protocols
• Industrial control applications demanding reliable synchronous data storage

Memory IC Procurement Notes

Verify that the specific ordering suffix matches the required speed grade and package variant. Confirm that the manufacturer designation aligns with current Infineon or Cypress Semiconductor product lines. Ensure that environmental compliance documentation corresponds to the specific revision level requested. Cross-reference the part number against official distributor catalogs to confirm availability status and authenticity before finalizing procurement orders.

Memory IC Selection Notes

Select this component when a 144-Mbit density with an 8 M × 18 organization is required. Choose this part for designs necessitating a 450 MHz clock frequency with 2.5-cycle read latency. Consider this device for systems requiring HSTL compatible I/O levels and programmable output impedance. Ensure the design supports the necessary 1.8 V core and variable I/O supply voltages.

Memory IC Part Context

This component belongs to the CY7C1668/1670KV18 family of 144-Mbit DDR II+ SRAMs. It shares architectural similarities with other members of the QDR and DDR II+ series, such as the CY7C1645 and CY7C1650. These devices are designed for high-performance parallel memory applications requiring precise timing and high throughput capabilities within embedded systems.

Memory IC Replacement Considerations

The CY7C1670KV18-450BZXC serves as a width-compatible alternative within the same datasheet, offering a 4 M × 36 organization instead of 8 M × 18. Verify electrical compatibility and pin alignment when considering substitutes from the broader CY7C16xxKV18 series.