CY7C2170KV18-400BZXC

Memory IC Overview

The CY7C2170KV18-400BZXC is an 18-Mbit DDR II+ Synchronous Pipelined SRAM with a 512K x 36 organization. It supports a maximum clock frequency of 400 MHz, enabling data transfer rates up to 800 MHz via double data rate interfaces. The device operates with a core voltage (VDD) of 1.8 V ± 0.1 V and I/O voltage (VDDQ) ranging from 1.4 V to VDD. Key electrical parameters include a 2.5-cycle read latency when DOFF is asserted HIGH and a maximum operating current of 640 mA for the 36-bit configuration.

Memory IC Feature Summary

• Supports two-word burst architecture with 2.5 cycle read latency to reduce address bus frequency.
• Integrates On-Die Termination (ODT) for data inputs, byte write selects, and input clocks to simplify board routing.
• Provides echo clocks (CQ/CQ) and a valid data indicator (QVLD) to simplify data capture in high-speed systems.
• Includes a phase locked loop (PLL) for accurate data placement and synchronous internally self-timed writes.

Memory IC Applications

• High-bandwidth networking equipment requiring fast packet processing.
• Telecommunications infrastructure utilizing precise DDR timing.
• Industrial control systems needing synchronous memory expansion.

Memory IC Procurement Notes

Verify the specific ordering suffix BZXC confirms lead-free packaging compliance against the manufacturer's current documentation. Confirm that the 400 MHz speed grade matches system requirements, as higher frequency variants exist within the same family. Ensure the 165-ball FBGA footprint aligns with the target PCB design constraints.

Memory IC Selection Notes

Select this component for applications requiring 36-bit data width and low latency access. Compare against the CY7C2168KV18 if an 18-bit interface is sufficient, as it shares similar architectural features. Consider the ODT range selection during power-up initialization to match system impedance requirements using the ZQ pin resistor.

Memory IC Part Context

This part belongs to the Cypress/Infineon DDR II+ SRAM family, designed for high-performance pipelined memory applications. It utilizes advanced 65nm technology to deliver high bandwidth while maintaining low power consumption. The device is compatible with HSTL I/O standards and supports depth expansion through replicated LD control signals.

Memory IC Replacement Considerations

CY7C2170KV18-450BZXC

Memory IC FAQ

How does the DOFF pin affect read latency?

When DOFF is asserted HIGH, the device operates with a 2.5-cycle read latency. When DOFF is LOW, it behaves like a DDR I device with one-cycle read latency.

What is the function of the QVLD pin?

QVLD is a valid output indicator that signals when data on the output pins is valid. It is edge-aligned with the echo clocks and asserts half a cycle before valid data arrives.