DAP236UT106

$0.24

Description：RF DIODE STANDARD 35V 150MW UMD3
Series：-

SKU:73187ec90c04 Category: RF Diodes Brand: Rohm Semiconductor

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Product introduction

DAP236UT106 is listed in the RF Diode range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is RF DIODE STANDARD 35V 150MW UMD3. Review the specifications below when checking this part for your BOM.

RF Diode specifications for DAP236UT106

Description：RF DIODE STANDARD 35V 150MW UMD3
Series：-
Mfr：Rohm Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
Diode Type：Standard - 1 Pair Common Anode
Voltage - Peak Reverse (Max)：35V
Current - Max：-
Capacitance @ Vr, F：1.2pF @ 6V, 1MHz
Resistance @ If, F：900mOhm @ 2mA, 100MHz
Power Dissipation (Max)：150 mW
Operating Temperature：125°C (TJ)
Package / Case：SC-70, SOT-323
Supplier Device Package：UMD3
Grade：-
Qualification：-

RF Diode datasheet and documents for DAP236UT106

DAP236UT106

RF Diode Overview

The DAP236UT106 is a small signal switching diode manufactured by ROHM Semiconductor, designed for high-frequency applications. It features a maximum repetitive reverse voltage of 35V and a current rating of 10mA. The device operates with a maximum junction temperature of 125°C and has a power dissipation capacity of 150mW. Packaged in the compact UMD3 surface-mount format, it utilizes silicon as the diode element material. This component contains two elements and offers a typical diode capacitance of 1.2 pF, supporting operation at frequencies up to 1 MHz.

RF Diode Feature Summary

Compact UMD3 surface-mount package design
High-speed switching capability with low capacitance
Silicon-based construction for reliability

RF Diode Applications

RF diode circuits
Small signal switching applications
Band switching systems

RF Diode Procurement Notes

Verify the specific datasheet version and RoHS compliance status directly from the manufacturer before integration. Confirm that the UMD3 package dimensions align with your PCB footprint requirements. Ensure thermal management strategies account for the 150mW power dissipation limit and the 125°C maximum junction temperature specification during operation.

RF Diode Selection Notes

Select this component when a compact, fast-switching diode is required for RF or high-frequency signal paths. The 35V reverse voltage rating suits low-voltage logic and signal processing environments. Consider the 1.2 pF capacitance value for high-speed circuit integrity. Verify availability through authorized distributors given the NRND status associated with similar series components.

RF Diode Part Context

This part belongs to the small signal switching diodes category within ROHM's portfolio. It serves as a specialized component for high-frequency signal handling rather than general-purpose rectification. The UMD3 package allows for automated surface-mount assembly, facilitating efficient production in consumer electronics and communication devices requiring minimal board space.