DCB010-TB-E

Diode Arrays Overview

The DCB010-TB-E is a silicon epitaxial planar very high-speed switching diode manufactured by onsemi. It features a cathode common configuration with an 80 V reverse voltage rating and a peak forward current of 300 mA. The device exhibits a maximum reverse recovery time of 4.0 ns and an interterminal capacitance of 3.0 pF at 1 MHz. Absolute maximum ratings include a junction temperature limit of 125 °C and allowable power dissipation of 200 mW.

Diode Arrays Feature Summary

• Designed for hybrid IC integration due to its compact package size.
• Provides fast switching speed capabilities suitable for high-frequency applications.
• Maintains low interterminal capacitance to minimize signal interference.

Diode Arrays Applications

• High-speed switching circuits
• Hybrid integrated circuit designs
• General electronics equipment

Diode Arrays Procurement Notes

Verify the manufacturer designation, as the component originates from Sanyo Semiconductor, which was acquired by onsemi. Confirm that the specific TB-E suffix matches the required tape-and-reel packaging format for your assembly line. Ensure the datasheet revision aligns with your design specifications before finalizing orders.

Diode Arrays Selection Notes

Select this component when a small footprint and rapid switching performance are critical requirements. The 80 V reverse voltage rating defines the maximum operating limits for your circuit design. Consider the 4.0 ns reverse recovery time for high-frequency signal integrity needs in your application architecture.

Diode Arrays Part Context

This part belongs to the DCB010 series of very high-speed switching diodes. It utilizes a silicon epitaxial planar technology optimized for reliability in standard electronic environments. The device is intended for general-purpose applications rather than specialized aerospace or medical uses requiring extreme reliability standards.

Diode Arrays Replacement Considerations

Consult official cross-reference documentation for verified substitutes. Generic equivalents may not match the specific 4.0 ns reverse recovery time or the exact package dimensions required for your hybrid IC layout.

Diode Arrays FAQ

What is the maximum reverse recovery time specified for this diode?

The maximum reverse recovery time (trr) is 4.0 ns under test conditions of IF=10mA, VR=6V, RL=50Ω, and Irr=0.1Irp.

How does the interterminal capacitance affect high-frequency performance?

The device maintains a low interterminal capacitance of 3.0 pF at 1 MHz, which helps preserve signal integrity in high-frequency switching applications.

Is this component suitable for use in hybrid ICs?

Yes, the datasheet explicitly states that the component is ideally suited for use in hybrid ICs due to its very small-sized package.