DCC010-TB-E

Description：DIODE ARRAY GP 80V 100MA SOT23-3
Series：-

SKU:ef1cc5f1f6df Category: Diode Arrays Brand: onsemi

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Product introduction

DCC010-TB-E is listed in the Diode Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is DIODE ARRAY GP 80V 100MA SOT23-3. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for DCC010-TB-E

Description：DIODE ARRAY GP 80V 100MA SOT23-3
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)
Diode Configuration：1 Pair Series Connection
Technology：Standard
Voltage - DC Reverse (Vr) (Max)：80 V
Current - Average Rectified (Io) (per Diode)：100mA
Voltage - Forward (Vf) (Max) @ If：1.2 V @ 100 mA
Speed：Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr)：4 ns
Current - Reverse Leakage @ Vr：500 nA @ 80 V
Operating Temperature - Junction：125°C (Max)
Mounting Type：Surface Mount
Package / Case：TO-236-3, SC-59, SOT-23-3
Supplier Device Package：SOT-23-3
Grade：-
Qualification：-

Diode Arrays datasheet and documents for DCC010-TB-E

DCC010-TB-E

Diode Arrays Overview

The DCC010 is an ultrahigh-speed switching diode manufactured by SANYO Electric Co., Ltd. It utilizes a silicon epitaxial planar type series connection structure. The device features a maximum repetitive reverse voltage (VRRM) of 58 V and a peak reverse voltage (VRPM) of 80 V. It supports a maximum average forward current (IFAV) of 30 mA and a non-repetitive peak forward surge current (IFSM) of 4 A. The package dissipation is rated at 200 mW, with a junction temperature range from -55°C to +150°C.

Diode Arrays Feature Summary

Ideally suited for use in hybrid ICs due to its very small package size.
Provides fast switching speed capabilities.
Exhibits small interterminal capacitance.

Diode Arrays Applications

Hybrid integrated circuits
Ultrahigh-speed switching applications

Diode Arrays Procurement Notes

Verify the manufacturer origin as SANYO Electric Co., Ltd., noting that the product information is historical as of March 1998. Confirm the specific ordering number EN1896B matches the required specifications. Ensure the component meets the absolute maximum ratings and electrical characteristics defined in the official datasheet before integration into designs.

Diode Arrays Selection Notes

Select this component when designing hybrid ICs requiring compact form factors and high-speed performance. Consider the low average forward current limit of 30 mA and the specific voltage ratings of 58 V VRRM and 80 V VRPM. Evaluate the thermal constraints given the 200 mW package dissipation rating and the wide operating temperature range.

Diode Arrays Part Context

This component belongs to the category of discrete semiconductor diodes, specifically classified as an ultrahigh-speed switching diode. It is part of SANYO's lineup of silicon epitaxial planar devices designed for specialized electronic applications where rapid response times and minimal physical footprint are critical design requirements.

Diode Arrays Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Cross-reference with other SANYO or equivalent manufacturers' ultrahigh-speed switching diodes featuring similar voltage and current ratings if direct substitution is necessary.