Diode Arrays DD104N12KAHPSA1 product image

DD104N12KAHPSA1

  • Description:DIODE MOD GP 1200V 104A POWRBLOK
  • Series:-

SKU:96dcef203d93 Category: Brand:

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DD104N12KAHPSA1 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is DIODE MOD GP 1200V 104A POWRBLOK. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for DD104N12KAHPSA1

  • Description:DIODE MOD GP 1200V 104A POWRBLOK
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Bulk
  • Diode Configuration:1 Pair Series Connection
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):1200 V
  • Current - Average Rectified (Io) (per Diode):104A
  • Voltage - Forward (Vf) (Max) @ If:1.4 V @ 300 A
  • Speed:Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:20 mA @ 1200 V
  • Operating Temperature - Junction:150°C
  • Mounting Type:Chassis Mount
  • Package / Case:POW-R-BLOK™ Module
  • Supplier Device Package:POW-R-BLOK™ Module
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for DD104N12KAHPSA1

DD104N12KAHPSA1

Diode Arrays Overview

The DD104N12KAHPSA1 is a silicon thyristor/diode module from Infineon Technologies, belonging to the Power Block series. It utilizes 20 mm press-pack technology for robust thermal and mechanical performance. The component integrates a single-phase topology suitable for high-power industrial applications. Key electrical characteristics include a repetitive peak off-state voltage of 1200 V and a continuous on-state current rating of 104 A at 180° electrical conduction. The device features a maximum junction temperature of 150 °C and a low on-state voltage drop of 0.7 V at maximum junction temperature.

Diode Arrays Feature Summary

  • Employs 20 mm press-pack construction for secure mounting and efficient heat dissipation in high-current environments.
  • Integrates a thyristor/diode configuration within a single compact module housing.
  • Designed for high thermal stability with a maximum junction temperature rating of 150 °C.

Diode Arrays Applications

  • Industrial motor drives
  • High-power rectifier circuits
  • Static VAR compensators

Diode Arrays Procurement Notes

Verify the specific suffix against official Infineon documentation to confirm exact electrical tolerances and packaging variants. Confirm RoHS compliance status through the manufacturer's latest product data sheet. Ensure the ordering part number matches the required voltage and current ratings for the target application before procurement.

Diode Arrays Selection Notes

Select this component for applications requiring high current handling and reliable thermal management via press-pack mounting. Evaluate the 1200 V blocking capability against system voltage peaks. Consider the 104 A continuous current rating relative to the cooling solution design. Verify compatibility with gate drive requirements for the integrated thyristor section.

Diode Arrays Part Context

This module is part of Infineon's Power Block family, which specializes in high-power discrete semiconductor solutions. The series is engineered for demanding industrial power electronics where reliability under high stress conditions is critical. The press-pack form factor distinguishes it from standard leaded or surface-mount packages, offering superior contact pressure and thermal interface options.

Diode Arrays Replacement Considerations

Consult official Infineon cross-reference guides for verified substitutes. Ensure any replacement maintains identical 20 mm press-pack dimensions and pinout configurations. Verify that alternative parts meet or exceed the 1200 V and 104 A specifications without altering the system's thermal design constraints.

DD104N12KAHPSA1DD104N12KAHPSA1

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