Diode Arrays DD1200S17H4B2BOSA2 product image

DD1200S17H4B2BOSA2

$768.69
  • Description:DIODE MODULE GP 1700V AGIHMB1301
  • Series:-

SKU:57aef646b91f Category: Brand:

  
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DD1200S17H4B2BOSA2 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is DIODE MODULE GP 1700V AGIHMB1301. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for DD1200S17H4B2BOSA2

  • Description:DIODE MODULE GP 1700V AGIHMB1301
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tray
  • Diode Configuration:2 Independent
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):1700 V
  • Current - Average Rectified (Io) (per Diode):-
  • Voltage - Forward (Vf) (Max) @ If:2.1 V @ 1200 A
  • Speed:Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:-
  • Operating Temperature - Junction:-40°C ~ 150°C
  • Mounting Type:Chassis Mount
  • Package / Case:Module
  • Supplier Device Package:AG-IHMB130-1
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for DD1200S17H4B2BOSA2

DD1200S17H4B2BOSA2

Diode Arrays Overview

The DD1200S17H4_B2 is a high-power IGBT module from Infineon Technologies, designed for demanding industrial applications. It features an IHM-B housing with an AlSiC base plate to enhance thermal cycling capability and power density. The module supports an extended operating junction temperature up to 150°C and provides robust insulation characteristics. Key electrical ratings include a maximum collector-emitter voltage of 1700V and a nominal continuous collector current of 1200A.

Diode Arrays Feature Summary

  • Features an AlSiC base plate for increased thermal cycling capability
  • Supports an extended operating junction temperature up to 150°C
  • Provides 4 kV AC insulation strength for one minute
  • Utilizes the IHM-B housing design for high power density

Diode Arrays Applications

  • 3-level applications
  • Active frontend (energy recovery)
  • High power converters
  • Multi-level inverters
  • Traction drives
  • Wind turbines

Diode Arrays Procurement Notes

Verify the specific ordering suffix B2 against official documentation to confirm exact configuration details. Ensure that the application environment complies with the specified isolation test voltage and mounting torque requirements. Confirm compliance with RoHS and REACH standards prior to integration into final equipment designs.

Diode Arrays Selection Notes

Select this module for systems requiring high current handling and robust thermal management under extreme conditions. The AlSiC base plate makes it suitable for applications subject to frequent thermal cycling. Ensure gate drive circuits are compatible with the module's switching characteristics and stray inductance limits.

Diode Arrays Part Context

This component belongs to the Diodes IGBT EC4 Module series by Infineon Technologies. It is part of a lineup designed for high-performance power conversion needs. The module integrates advanced semiconductor technology within a rugged mechanical package to ensure reliability in critical infrastructure and industrial machinery.

Diode Arrays Replacement Considerations

Consult official Infineon documentation for verified substitute part numbers. Do not assume cross-compatibility with other modules without verifying pinout, thermal resistance, and electrical ratings.

DD1200S17H4B2BOSA2DD1200S17H4B2BOSA2
$768.69
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