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DD1200S17H4B2BOSA2 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is DIODE MODULE GP 1700V AGIHMB1301. Review the specifications below when checking this part for your BOM.
The DD1200S17H4_B2 is a high-power IGBT module from Infineon Technologies, designed for demanding industrial applications. It features an IHM-B housing with an AlSiC base plate to enhance thermal cycling capability and power density. The module supports an extended operating junction temperature up to 150°C and provides robust insulation characteristics. Key electrical ratings include a maximum collector-emitter voltage of 1700V and a nominal continuous collector current of 1200A.
Verify the specific ordering suffix B2 against official documentation to confirm exact configuration details. Ensure that the application environment complies with the specified isolation test voltage and mounting torque requirements. Confirm compliance with RoHS and REACH standards prior to integration into final equipment designs.
Select this module for systems requiring high current handling and robust thermal management under extreme conditions. The AlSiC base plate makes it suitable for applications subject to frequent thermal cycling. Ensure gate drive circuits are compatible with the module's switching characteristics and stray inductance limits.
This component belongs to the Diodes IGBT EC4 Module series by Infineon Technologies. It is part of a lineup designed for high-performance power conversion needs. The module integrates advanced semiconductor technology within a rugged mechanical package to ensure reliability in critical infrastructure and industrial machinery.
Consult official Infineon documentation for verified substitute part numbers. Do not assume cross-compatibility with other modules without verifying pinout, thermal resistance, and electrical ratings.
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