DD200S33K2CC1NOSA1

Diode Arrays Overview

The DD200S33K2CC1NOSA1 is a high-voltage inverter diode module rated for a repetitive peak reverse voltage of 3300 V and a continuous DC forward current of 200 A. It features a maximum power dissipation of 400 kW at 125°C junction temperature and an I²t value of 14.0 kA²s. The module utilizes an AlSiC baseplate with internal AlN basic insulation, providing a creepage distance of 32.2 mm and clearance of 19.1 mm. Isolation test voltage is 6.0 kV RMS, with a partial discharge extinction voltage of 2.6 kV RMS.

Diode Arrays Feature Summary

• High-voltage capability designed for demanding industrial applications
• Robust thermal management utilizing an AlSiC baseplate
• Integrated internal isolation using Aluminum Nitride (AlN)
• High surge current handling capacity

Diode Arrays Applications

• Industrial motor drives
• Medium voltage variable frequency drives
• Power conversion systems

Diode Arrays Procurement Notes

Verify the specific ordering suffix CC1NOSA1 against official Infineon documentation to confirm exact manufacturing specifications and compliance status. Ensure compatibility with recommended gate drive modules such as FF200R33KF2C for dynamic performance validation. Confirm that application notes regarding mounting torque and thermal interface material are consulted prior to integration.

Diode Arrays Selection Notes

Select this component based on its 3300 V rating and 200 A continuous current capacity. Evaluate the low stray inductance and thermal resistance characteristics for system efficiency. Verify that the operating junction temperature range of -40°C to 125°C aligns with environmental requirements. Consider the mechanical dimensions and mounting torque specifications for proper heat sink integration.

Diode Arrays Part Context

This part belongs to the Infineon IGBT module family, specifically categorized as an inverter diode. It is engineered for high-power semiconductor applications requiring robust voltage blocking and reliable switching performance. The module design emphasizes thermal stability and electrical isolation suitable for medium-to-high voltage industrial environments.

Diode Arrays Replacement Considerations

Consult official Infineon substitution lists for verified alternatives. Cross-reference technical parameters including voltage ratings, current capacities, and package dimensions to ensure functional equivalence without compromising system safety or performance.

Diode Arrays FAQ

What is the maximum repetitive peak reverse voltage?

The maximum repetitive peak reverse voltage is 3300 V.

What material is used for the module baseplate?

The module baseplate is made of Aluminum Silicon Carbide (AlSiC).

What is the isolation test voltage?

The isolation test voltage is 6.0 kV RMS at 50 Hz for 1 minute.