DD800S17H4B2BOSA2

Diode Arrays Overview

The DD800S17H4B2BOSA2 is an IGBT module from the IHM-B series manufactured by Infineon Technologies. It features a maximum repetitive peak reverse voltage of 1700 V and a continuous DC forward current rating of 800 A. The device supports an extended operating junction temperature up to 150°C and utilizes an AlSiC base plate for enhanced thermal cycling capability. Key electrical parameters include a forward voltage of 1.90 V at 800 A and 125°C, and a module stray inductance of 18 nH.

Diode Arrays Feature Summary

• Incorporates an AlSiC base plate to provide increased thermal cycling capability and high power density.
• Features an IHM-B housing with high creepage and clearance distances for robust insulation.
• Supports an extended operating junction temperature (Tvj op) of 150°C for high current density applications.

Diode Arrays Applications

• 3-level-applications
• Active frontend (energy recovery)
• High power converters
• Multi level inverter
• Traction drives

Diode Arrays Procurement Notes

Verify the specific ordering suffix B2 against official documentation to confirm package and terminal configurations. Ensure compatibility with the FD800R17HP4-K_B2 module for accurate dynamic data assessment. Confirm that application requirements align with the specified isolation test voltage and mounting torque specifications provided in the datasheet.

Diode Arrays Selection Notes

Select this component for designs requiring high power density and robust thermal management in medium to high-voltage environments. The AlSiC substrate offers superior performance compared to traditional copper substrates under cyclic loading. Verify that the system can accommodate the specified stray inductance and mounting hardware requirements for optimal electrical and mechanical integration.

Diode Arrays Part Context

This part belongs to the IHM-B module family designed for high-power industrial and traction applications. It is engineered to handle significant electrical loads while maintaining reliability through advanced packaging technologies. The module integrates high-performance semiconductor chips within a housing optimized for thermal dissipation and electrical isolation.

Diode Arrays Replacement Considerations

Consult official Infineon documentation for confirmed substitute part numbers. Cross-reference technical specifications carefully when evaluating alternative components to ensure compatibility with existing system constraints and performance requirements.

Diode Arrays FAQ

What material is used for the module baseplate?

The module utilizes an AlSiC (Aluminum Silicon Carbide) base plate to increase thermal cycling capability.

What is the maximum operating junction temperature?

The extended operating junction temperature (Tvj op) is rated up to 150°C.

Is there a specific module required for dynamic data validation?

Yes, dynamic data are valid in conjunction with the FD800R17HP4-K_B2 module.