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DG186AA/883 is listed in the Analog Switches, Multiplexers, Demultiplexers range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is IC SWITCH SPDTX1 10OHM TO100-10. Review the specifications below when checking this part for your BOM.
The DG186AA/883 is a precision single-pole, double-throw (SPDT) analog switch manufactured by Vishay Siliconix. It utilizes n-channel JFET transistors and a TTL-compatible bipolar driver to provide accurate switching of video and audio signals with constant on-resistance over the entire analog range. The device features break-before-make switching action to eliminate inadvertent shorting between channels. Key electrical parameters include a maximum drain-source on-resistance of 10 ohms, an analog signal range up to 15 V, and low leakage current below 2 nA in the on state. It operates within a temperature range of -55 °C to +125 °C and is housed in a 10-pin metal can package.
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm that the part number matches the specific military-grade suffix AA/883. Check datasheet revisions for any updates to mechanical dimensions or electrical limits before finalizing procurement orders.
Select this component when low distortion and flat on-resistance are critical for signal integrity. Compare against DG187 and DG188 variants if higher on-resistance tolerances are acceptable for cost reduction. Ensure supply voltages align with the specified dual or single supply configurations for optimal performance.
This component belongs to the DG186/187/188 series of high-speed drivers with SPDT JFET switches. The DG186 variant specifically offers the lowest on-resistance among the three, making it suitable for high-fidelity signal paths requiring minimal voltage drop across the switch.
Public confirmed substitute part numbers: DG187AA/883, DG188AA/883.
The analog signal range extends from -7.5 V to +15 V under standard test conditions.
It employs a break-before-make switching action designed to eliminate inadvertent shorting between channels during state transitions.
The channel on leakage current is less than 2 nA, ensuring minimal signal degradation.
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