DME2831-000

RF Diode Overview

The DME2831-000 is a beam-lead silicon Schottky mixer diode from Skyworks Solutions, designed for K and Ka bands (18.0 to 40.0 GHz). It is configured as a series pair with N-type polarity and medium drive characteristics. Key electrical specifications include a maximum junction capacitance of 0.1 pF at 0 V, a typical series resistance of 18 Ω at 5 mA, and a forward voltage range of 375 to 550 mV at 1 mA. The device utilizes the 504-012 outline drawing package.

RF Diode Feature Summary

• Beam-lead design reduces bonding challenges associated with low capacitance junctions
• Statistical Process Control wafer fabrication ensures uniformity and close impedance control
• Low parasitics and low intermodulation distortion suitable for balanced mixers

RF Diode Applications

• Microwave Integrated Circuits (MICs)
• Balanced Mixers
• Modulators
• High-speed switches

RF Diode Procurement Notes

Verify component authenticity by checking the manufacturer's official datasheet against the part number. Confirm that the specific ordering suffix matches the required configuration. Ensure handling procedures strictly follow electrostatic discharge precautions due to the sensitivity of the beam-lead structure.

RF Diode Selection Notes

Select this part for applications requiring medium local oscillator drive levels in the K or Ka frequency bands. Compare the specified series resistance and forward voltage against circuit requirements to ensure proper impedance matching. Verify that the beam-lead package dimensions align with the intended substrate layout.

RF Diode Part Context

This component belongs to the DME, DMF, and DMJ series of silicon beam-lead Schottky mixer diodes. The 'DME' prefix specifically denotes an N-type device with medium drive characteristics. These devices are categorized into six frequency ranges: S, C, X, Ku, K, and Ka bands.

RF Diode Replacement Considerations

DMJ2833-000 (High Drive Series Pair), DMF2828-000 (Low Drive Series Pair)