RF Amplifiers F1129LBNELI8 product image

F1129LBNELI8

  • Description:IC AMP 3G/4G TDD 3.2GHZ 12VFQFPN
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tape & Reel (TR)

SKU:75bf49096db5 Category: Brand:

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F1129LBNELI8 is listed in the RF Amplifiers range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is IC AMP 3G/4G TDD 3.2GHZ 12VFQFPN. Review the specifications below when checking this part for your BOM.

RF Amplifiers specifications for F1129LBNELI8

  • Description:IC AMP 3G/4G TDD 3.2GHZ 12VFQFPN
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tape & Reel (TR)
  • Frequency:1.4GHz ~ 3.2GHz
  • P1dB:18dBm
  • Gain:18dB
  • Noise Figure:2.2dB
  • RF Type:3G/4G, TDD, FDD
  • Voltage - Supply:5V
  • Current - Supply:70mA
  • Test Frequency:3.6GHz
  • Mounting Type:Surface Mount
  • Package / Case:12-WFQFN Exposed Pad
  • Supplier Device Package:12-VFQFPN (2x2)
  • Grade:-
  • Qualification:-

RF Amplifiers datasheet and documents for F1129LBNELI8

F1129LBNELI8

RF Amplifiers Overview

The F1129LBNELI8 is a single-ended input, differential output RF amplifier IC from Renesas Electronics Corporation. It operates within a frequency range of 1.4GHz to 3.2GHz and supports both TDD and FDD modes for 3G/4G applications. The device utilizes a 5V power supply and draws a typical supply current of 70mA. Key electrical parameters include a gain of 18dB, a noise figure of 4dB, and a P1dB compression point of 21dBm. It is housed in a 12-VFQFPN (2x2) surface-mount package with a bare thermal pad.

RF Amplifiers Feature Summary

  • Single-ended input and differential output architecture
  • Supports TDD and FDD communication modes
  • Optimized for 3G and 4G cellular applications

RF Amplifiers Applications

  • 3G base station front-end modules
  • 4G LTE signal amplification
  • TDD/FDD transceiver systems

RF Amplifiers Procurement Notes

Verify the specific suffix '8' against the manufacturer's official documentation to confirm pinout compatibility and functional equivalence. Ensure the operating environment remains within the specified voltage and temperature limits. Cross-reference the datasheet revision history for any updates regarding recommended operating conditions or application circuit modifications before final integration.

RF Amplifiers Selection Notes

Select this component when a high-gain amplifier with differential output is required for 3G/4G infrastructure. Consider the 12-VFQFPN package size for board space constraints. Evaluate the 18dB gain and 21dBm linearity against system link budget requirements. Confirm that the 5V supply rail aligns with the existing power distribution network design.

RF Amplifiers Part Context

This part belongs to the F1129 family of high-gain RF amplifiers designed for wireless communications. The series typically covers frequencies up to 6GHz, offering solutions for various mobile network generations. The F1129LBNELI8 specifically targets the lower band spectrum, providing a compact solution for modern cellular base stations and access points requiring efficient signal processing.

RF Amplifiers Replacement Considerations

Public confirmed substitute part numbers: None available.

F1129LBNELI8F1129LBNELI8

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