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F1129LBNELI8 is listed in the RF Amplifiers range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is IC AMP 3G/4G TDD 3.2GHZ 12VFQFPN. Review the specifications below when checking this part for your BOM.
The F1129LBNELI8 is a single-ended input, differential output RF amplifier IC from Renesas Electronics Corporation. It operates within a frequency range of 1.4GHz to 3.2GHz and supports both TDD and FDD modes for 3G/4G applications. The device utilizes a 5V power supply and draws a typical supply current of 70mA. Key electrical parameters include a gain of 18dB, a noise figure of 4dB, and a P1dB compression point of 21dBm. It is housed in a 12-VFQFPN (2x2) surface-mount package with a bare thermal pad.
Verify the specific suffix '8' against the manufacturer's official documentation to confirm pinout compatibility and functional equivalence. Ensure the operating environment remains within the specified voltage and temperature limits. Cross-reference the datasheet revision history for any updates regarding recommended operating conditions or application circuit modifications before final integration.
Select this component when a high-gain amplifier with differential output is required for 3G/4G infrastructure. Consider the 12-VFQFPN package size for board space constraints. Evaluate the 18dB gain and 21dBm linearity against system link budget requirements. Confirm that the 5V supply rail aligns with the existing power distribution network design.
This part belongs to the F1129 family of high-gain RF amplifiers designed for wireless communications. The series typically covers frequencies up to 6GHz, offering solutions for various mobile network generations. The F1129LBNELI8 specifically targets the lower band spectrum, providing a compact solution for modern cellular base stations and access points requiring efficient signal processing.
Public confirmed substitute part numbers: None available.
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