Single FETs, MOSFETs FDC638APZ product image

FDC638APZ

$0.72
  • Description:MOSFET P-CH 20V 4.5A SUPERSOT6
  • Series:PowerTrench®
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:5f035e1a2315 Category: Brand:

  
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FDC638APZ is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET P-CH 20V 4.5A SUPERSOT6. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for FDC638APZ

  • Description:MOSFET P-CH 20V 4.5A SUPERSOT6
  • Series:PowerTrench®
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):20 V
  • Current - Continuous Drain (Id) @ 25°C:4.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
  • Rds On (Max) @ Id, Vgs:43mOhm @ 4.5A, 4.5V
  • Vgs(th) (Max) @ Id:1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:12 nC @ 4.5 V
  • Vgs (Max):±12V
  • Input Capacitance (Ciss) (Max) @ Vds:1000 pF @ 10 V
  • FET Feature:-
  • Power Dissipation (Max):1.6W (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:SuperSOT™-6
  • Package / Case:SOT-23-6 Thin, TSOT-23-6

Single FETs, MOSFETs datasheet and documents for FDC638APZ

FDC638APZ

Single FETs, MOSFETs Overview

The FDC638APZ is a P-channel enhancement mode MOSFET from the PowerTrench series, manufactured by onsemi. It features a 20 V drain-source breakdown voltage and supports a continuous drain current of 4.5 A. The device utilizes an SSOT-6 surface-mount package with a maximum power dissipation of 1.6 W. Key electrical characteristics include a low on-resistance of 48 mΩ at -4.5 V gate drive, a gate threshold voltage of 1.5 V, and a total gate charge of 14 nC. Operating temperatures range from -55 °C to +150 °C junction temperature.

Single FETs, MOSFETs Feature Summary

  • Low on-resistance for efficient power switching
  • Enhanced PowerTrench technology for optimized performance
  • Compact SSOT-6 surface-mount packaging

Single FETs, MOSFETs Applications

  • Power management circuits
  • Load switches
  • Battery protection systems

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'Z' against official manufacturer documentation to confirm lead-free status or tape-and-reel configuration. Ensure the component matches the exact SSOT-6 footprint and pinout specifications required for your PCB layout. Cross-reference datasheet revisions to confirm parameter consistency before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component when a compact P-channel switch is required for low-voltage applications. The 48 mΩ on-resistance offers efficiency benefits over higher resistance alternatives. Verify that the 20 V rating aligns with system voltage requirements and that the thermal dissipation capabilities suit the intended operating environment without excessive heatsinking.

Single FETs, MOSFETs Part Context

This part belongs to the FDC638P family of single P-channel MOSFETs. It shares core electrical specifications with variants differing primarily in packaging or reel configurations. The PowerTrench branding indicates adherence to onsemi's specific process technology for low Rds(on) performance in small outline packages.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes may include other 20 V P-channel MOSFETs in SSOT-6 packages with comparable Rds(on) and current ratings. Verify pin compatibility and thermal characteristics before substitution. Consult official cross-reference lists for confirmed equivalents.

FDC638APZFDC638APZ
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