FDD4141

$0.85

Description：MOSFET P-CH 40V 10.8A/50A DPAK
Series：*
Mfr：UMW
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:db358ecd8de3 Category: Single FETs, MOSFETs Brand: UMW

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Product introduction

FDD4141 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists UMW. Its product description is MOSFET P-CH 40V 10.8A/50A DPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for FDD4141

Description：MOSFET P-CH 40V 10.8A/50A DPAK
Series：*
Mfr：UMW
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：-
Technology：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：-
Supplier Device Package：-
Package / Case：-

Single FETs, MOSFETs datasheet and documents for FDD4141

FDD4141

Single FETs, MOSFETs Overview

The FDD4141 is a P-Channel MOSFET manufactured by UMW, utilizing high-performance trench technology to achieve extremely low on-resistance. It features a Drain-to-Source Voltage (VDS) of -40 V and a Gate-to-Source Voltage (VGS) rating of ±20 V. The device supports a continuous drain current of -50 A at 25°C case temperature, limited by the package, with a silicon-limited rating of -58 A. Static Drain-to-Source On-Resistance (rDS(on)) is specified as less than 12.3 mΩ at VGS = -10 V and ID = -12.7 A, and less than 18 mΩ at VGS = -4.5 V. Power dissipation reaches 69 W at 25°C case temperature. The junction temperature range spans from -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

High performance trench technology for extremely low rDS(on)
RoHS Compliant

Single FETs, MOSFETs Applications

Inverter
Power Supplies

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering code against the manufacturer's official documentation to ensure correct package type and delivery mode. Confirm that the requested variant matches the TO-252 package configuration and tape-and-reel quantity specifications provided in the datasheet. Cross-reference part markings and electrical characteristics with the latest published data sheet to avoid discrepancies in component sourcing.

Single FETs, MOSFETs Selection Notes

Select this component based on its -40 V voltage rating and low on-resistance characteristics suitable for power switching applications. Consider the thermal resistance values and maximum current ratings relative to the intended heat sinking and ambient conditions. Ensure gate drive voltages align with the specified thresholds for optimal conduction and switching performance within the defined operating temperature range.

Single FETs, MOSFETs Part Context

This component is a P-Channel MOSFET produced by UMW Semiconductor Co., Limited. It is housed in a TO-252 package, which influences its thermal dissipation capabilities and physical mounting requirements. The device is designed for general-purpose power switching tasks where low conduction losses are critical. The manufacturing process employs trench technology to enhance electrical performance compared to standard planar structures.