Single FETs, MOSFETs FDH3632 product image

FDH3632

$4.39
  • Description:MOSFET N-CH 100V 12A/80A TO247-3
  • Series:PowerTrench®
  • Mfr:onsemi
  • Package:Tube

SKU:c67b5b473d03 Category: Brand:

  
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FDH3632 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 100V 12A/80A TO247-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for FDH3632

  • Description:MOSFET N-CH 100V 12A/80A TO247-3
  • Series:PowerTrench®
  • Mfr:onsemi
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):100 V
  • Current - Continuous Drain (Id) @ 25°C:12A (Ta), 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):6V, 10V
  • Rds On (Max) @ Id, Vgs:9mOhm @ 80A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:110 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:6000 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):310W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-247-3
  • Package / Case:TO-247-3

Single FETs, MOSFETs datasheet and documents for FDH3632

FDH3632

Single FETs, MOSFETs Overview

The FDH3632 is a PowerTrench N-channel MOSFET from onsemi, housed in a TO-247 package. It features a 100 V drain-source voltage rating and an 80 A continuous drain current capability at case temperatures below 111°C. The device exhibits a typical on-resistance of 7.5 mΩ at 10 V gate drive and 80 A. Total gate charge is typically 84 nC at 10 V. Maximum power dissipation reaches 310 W at 25°C case temperature. Operating junction temperature ranges from -55°C to +175°C.

Single FETs, MOSFETs Feature Summary

  • Low total gate charge for reduced switching losses
  • Low Miller charge to minimize voltage spikes
  • Low body diode reverse recovery charge (Qrr)
  • Capable of single pulse and repetitive pulse unclamped inductive switching

Single FETs, MOSFETs Applications

  • Synchronous rectification
  • Battery protection circuits
  • Motor drives
  • Uninterruptible power supplies
  • Micro solar inverters

Single FETs, MOSFETs Procurement Notes

Verify the specific part number suffix against official documentation to confirm the correct package type and compliance status. Ensure that ordering details match the required thermal and electrical specifications for the intended application environment. Cross-reference datasheet revisions to confirm parameter consistency.

Single FETs, MOSFETs Selection Notes

Select this component based on its 100 V rating and high current handling capabilities suitable for power conversion tasks. Evaluate thermal management requirements using the provided junction-to-ambient resistance data. Consider the low gate charge characteristics for efficient driver design in high-frequency switching applications.

Single FETs, MOSFETs Part Context

This device belongs to the PowerTrench family of N-channel MOSFETs manufactured by onsemi. It shares core electrical specifications with the FDP3632 and FDB3632 variants, differing primarily in the physical package configuration. The TO-247 form factor provides robust mechanical stability and thermal performance for industrial and automotive environments.

Single FETs, MOSFETs Replacement Considerations

FDH3632

Single FETs, MOSFETs FAQ

What is the maximum single pulse avalanche energy?

The maximum single pulse avalanche energy is 337 mJ, starting at a junction temperature of 25°C.

Does the device support repetitive pulse unclamped inductive switching?

Yes, the datasheet confirms the device has UIS capability for both single pulse and repetitive pulse conditions.

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