Single FETs, MOSFETs FDMA86108LZ product image

FDMA86108LZ

$1.50
  • Description:MOSFET N-CH 100V 2.2A 6MICROFET
  • Series:PowerTrench®
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:6fbb71c644ba Category: Brand:

  
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FDMA86108LZ is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 100V 2.2A 6MICROFET. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for FDMA86108LZ

  • Description:MOSFET N-CH 100V 2.2A 6MICROFET
  • Series:PowerTrench®
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):100 V
  • Current - Continuous Drain (Id) @ 25°C:2.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:243mOhm @ 2.2A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:3 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:163 pF @ 50 V
  • FET Feature:-
  • Power Dissipation (Max):2.4W (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:6-MicroFET (2x2)
  • Package / Case:6-WDFN Exposed Pad

Single FETs, MOSFETs datasheet and documents for FDMA86108LZ

FDMA86108LZ

Single FETs, MOSFETs Overview

The FDMA86108LZ is a single N-Channel PowerTrench MOSFET manufactured by onsemi. It utilizes silicon technology and is housed in a MicroFET-6 surface-mount package. Key electrical specifications include a drain-source breakdown voltage (Vds) of 100 V, a continuous drain current (Id) of 2.2 A, and a maximum gate-source voltage (Vgs) of ±20 V. The device features a typical on-resistance (Rds On) of 446 mOhms and a gate charge (Qg) of 2.1 nC. It operates within a temperature range of -55 °C to +150 °C with a power dissipation rating of 2.4 W.

Single FETs, MOSFETs Feature Summary

  • Enhancement mode N-Channel configuration for efficient switching control
  • PowerTrench technology designed for low on-resistance performance
  • MicroFET-6 package optimized for surface-mount assembly

Single FETs, MOSFETs Applications

  • DC-DC converter circuits
  • Load switching applications
  • Power management modules

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision and ordering information directly from onsemi or authorized distributors. Confirm that the MicroFET-6 package dimensions and pinout match the design requirements. Ensure compliance with RoHS directives as indicated in the product specifications before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component when a 100 V N-Channel MOSFET with moderate current handling capability is required. The 446 mOhm on-resistance suits low-power switching tasks. Consider the 2.1 nC gate charge for drive circuit compatibility. The wide operating temperature range supports diverse environmental conditions.

Single FETs, MOSFETs Part Context

This part belongs to the FDMA series of PowerTrench MOSFETs from onsemi. These devices are engineered for general-purpose power switching applications. The MicroFET-6 package provides a compact footprint suitable for space-constrained designs. The series emphasizes efficiency through optimized silicon architecture.

Single FETs, MOSFETs Replacement Considerations

Consult official cross-reference guides for verified substitutes. Ensure any replacement matches the 100 V rating, 2.2 A current capacity, and MicroFET-6 package form factor.

FDMA86108LZFDMA86108LZ
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