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FDMA86108LZ is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 100V 2.2A 6MICROFET. Review the specifications below when checking this part for your BOM.
The FDMA86108LZ is a single N-Channel PowerTrench MOSFET manufactured by onsemi. It utilizes silicon technology and is housed in a MicroFET-6 surface-mount package. Key electrical specifications include a drain-source breakdown voltage (Vds) of 100 V, a continuous drain current (Id) of 2.2 A, and a maximum gate-source voltage (Vgs) of ±20 V. The device features a typical on-resistance (Rds On) of 446 mOhms and a gate charge (Qg) of 2.1 nC. It operates within a temperature range of -55 °C to +150 °C with a power dissipation rating of 2.4 W.
Verify the specific datasheet revision and ordering information directly from onsemi or authorized distributors. Confirm that the MicroFET-6 package dimensions and pinout match the design requirements. Ensure compliance with RoHS directives as indicated in the product specifications before finalizing procurement.
Select this component when a 100 V N-Channel MOSFET with moderate current handling capability is required. The 446 mOhm on-resistance suits low-power switching tasks. Consider the 2.1 nC gate charge for drive circuit compatibility. The wide operating temperature range supports diverse environmental conditions.
This part belongs to the FDMA series of PowerTrench MOSFETs from onsemi. These devices are engineered for general-purpose power switching applications. The MicroFET-6 package provides a compact footprint suitable for space-constrained designs. The series emphasizes efficiency through optimized silicon architecture.
Consult official cross-reference guides for verified substitutes. Ensure any replacement matches the 100 V rating, 2.2 A current capacity, and MicroFET-6 package form factor.
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