FDME820NZT

Single FETs, MOSFETs Overview

The onsemi FDME820NZT is a single N-Channel PowerTrench MOSFET designed for low and medium voltage applications. It features a 20V drain-source breakdown voltage (Vds) and supports a continuous drain current (Id) of 9A at 25°C. The device exhibits a maximum on-resistance (Rds(on)) of 18mΩ at Vgs = 4.5V, optimized for efficiency. It utilizes the advanced Power Trench process to enhance performance at low gate drive voltages, including optimization at Vgs = 1.8V. The component operates within a junction temperature range of -55°C to +150°C and is housed in a compact MicroFET surface-mount package.

Single FETs, MOSFETs Feature Summary

• Advanced Power Trench process technology for optimized on-resistance at low gate voltages
• Single N-Channel configuration with enhanced switching performance
• Compact MicroFET surface-mount packaging for space-constrained designs

Single FETs, MOSFETs Applications

• Low voltage DC-DC converter circuits
• Power management modules requiring efficient switching
• Battery protection and load switch applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix and tape/reel specifications against the official onsemi datasheet before procurement. Confirm that the MicroFET package dimensions align with your PCB footprint requirements. Ensure that the thermal management strategy accounts for the power dissipation limits specified in the electrical characteristics table under your intended operating conditions.

Single FETs, MOSFETs Selection Notes

Select this component when a single N-Channel MOSFET with 20V rating and 9A current capacity is required in a small form factor. The low Rds(on) makes it suitable for high-efficiency power paths. Consider the gate charge characteristics if driving speed is critical. Verify compatibility with the system's logic-level gate drive voltage, as the device is optimized for low-voltage operation.

Single FETs, MOSFETs Part Context

The FDME820NZT belongs to onsemi's PowerTrench family of N-Channel MOSFETs. This series is engineered using proprietary trench technology to minimize conduction losses while maintaining robust switching capabilities. The MicroFET package provides a balance between thermal performance and board space efficiency, targeting portable electronics and industrial control systems where size and power density are key constraints.

Single FETs, MOSFETs Replacement Considerations

Check for direct pin-compatible alternatives within the same PowerTrench family or similar packages from other manufacturers. Ensure substitute parts meet or exceed the 20V Vds, 9A Id, and 18mΩ Rds(on) specifications. Verify package outline drawings match exactly to avoid mechanical integration issues.