FDMS2D5N08C

$2.79

Description：MOSFET N-CH 80V 166A POWER56
Series：PowerTrench®
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:b9a142382210 Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

FDMS2D5N08C is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 80V 166A POWER56. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for FDMS2D5N08C

Description：MOSFET N-CH 80V 166A POWER56
Series：PowerTrench®
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：80 V
Current - Continuous Drain (Id) @ 25°C：166A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
Rds On (Max) @ Id, Vgs：2.7mOhm @ 68A, 10V
Vgs(th) (Max) @ Id：4V @ 380µA
Gate Charge (Qg) (Max) @ Vgs：84 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：6240 pF @ 40 V
FET Feature：-
Power Dissipation (Max)：138W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：Power56
Package / Case：8-PowerTDFN

Single FETs, MOSFETs datasheet and documents for FDMS2D5N08C

FDMS2D5N08C

Single FETs, MOSFETs Overview

The onsemi FDMS2D5N08C is a dual N-channel MOSFET utilizing Shielded Gate POWERTRENCH technology. It features an 80 V drain-to-source voltage rating and a maximum continuous drain current of 166 A at TC = 25 °C. The device achieves a maximum RDS(on) of 2.7 mΩ at VGS = 10 V and ID = 68 A, or 6.7 mΩ at VGS = 6 V and ID = 34 A. Packaged in a PQFN-8 (CASE 483AF), it offers a junction-to-case thermal resistance of 0.9 °C/W.

Single FETs, MOSFETs Feature Summary

Shielded Gate MOSFET Technology minimizes on-state resistance while maintaining superior switching performance.
Soft body diode characteristics reduce reverse recovery charge by approximately 50% compared to other suppliers, lowering switching noise and EMI.
Robust package design with MSL1 classification ensures reliability under various environmental conditions.

Single FETs, MOSFETs Applications

Primary DC-DC converter stages
Synchronous rectification in DC-DC and AC-DC converters
Motor drive circuits
Solar power applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details. Confirm that the component meets RoHS compliance and lead-free requirements for your target market regulations. Ensure the supplier provides valid traceability data consistent with onsemi manufacturing standards.

Single FETs, MOSFETs Selection Notes

Select this component when low conduction loss and high efficiency are critical in power conversion designs. The dual configuration allows for compact half-bridge or synchronous rectifier implementations. Evaluate thermal management capabilities based on the 0.9 °C/W junction-to-case resistance and application-specific PCB copper pad designs.

Single FETs, MOSFETs Part Context

This part belongs to onsemi's MV MOSFET portfolio, leveraging advanced POWERTRENCH process optimization. It is designed for high-current, low-voltage applications requiring robust switching performance and minimized electromagnetic interference through optimized body diode characteristics.

Single FETs, MOSFETs Replacement Considerations

Cross-reference with other dual N-channel MOSFETs offering similar 80 V ratings and comparable RDS(on) values. Verify pinout compatibility with the PQFN-8 CASE 483AF footprint before substitution.