FDMS9409L-F085

Single FETs, MOSFETs Overview

The FDMS9409L-F085 is a single N-Channel Power Trench MOSFET manufactured by onsemi. It utilizes silicon technology and features an enhancement mode configuration within a Power-56-8 surface-mount package. Key electrical specifications include a drain-source breakdown voltage (Vds) of 40 V, a continuous drain current (Id) of 65 A, and a maximum gate-source voltage (Vgs) range of -20 V to +20 V. The device exhibits a low on-resistance (Rds On) of 2.3 mOhms and a gate charge (Qg) of 70 nC. It supports a power dissipation (Pd) of 100 W and operates within a temperature range of -55°C to +175°C. The component holds AEC-Q101 qualification.

Single FETs, MOSFETs Feature Summary

• Power Trench MOSFET technology for enhanced performance
• AEC-Q101 qualified for automotive reliability standards
• Low on-resistance design for efficient power switching
• Enhanced thermal stability with high junction temperature rating

Single FETs, MOSFETs Applications

• Automotive power management systems
• DC-DC converter circuits
• Motor control applications

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix F085 to confirm packaging details such as reel or cut tape options. Confirm current availability status as the product lifecycle may indicate obsolescence or limited supply. Ensure compatibility with required RoHS compliance standards for your region. Cross-reference the datasheet for precise thermal resistance values during integration planning.

Single FETs, MOSFETs Selection Notes

Select this component when a 40 V N-Channel MOSFET with high current capability is required. The 2.3 mOhm Rds On offers efficiency benefits in low-voltage applications. Consider the Power-56-8 package for its thermal performance and footprint constraints. Verify that the 65 A current rating meets the peak load requirements of the target circuit design.

Single FETs, MOSFETs Part Context

This part belongs to the FDMS9409L series from onsemi, designed for robust power switching applications. The Power-56-8 package provides a compact solution for high-current density needs. It is engineered to meet stringent automotive quality standards, ensuring reliability in demanding environments.

Single FETs, MOSFETs Replacement Considerations

Check for direct substitutes within the same series or similar packages. Verify pinout compatibility and electrical parameter equivalence before substitution.