FDR844P

Single FETs, MOSFETs Overview

The FDR844P is a P-Channel PowerTrench MOSFET optimized for battery power management. It features a SuperSOT-8 package and supports a Drain-Source Voltage (VDSS) of -20 V with a continuous Drain Current (ID) of -10 A. The device exhibits low on-resistance, specified at 11 mΩ @ VGS = -4.5 V, 14 mΩ @ VGS = -2.5 V, and 20 mΩ @ VGS = -1.8 V. Key electrical parameters include a Gate Threshold Voltage (VGS(th)) range of -0.4 V to -1.5 V, Input Capacitance (Ciss) of 4951 pF, and Total Gate Charge (Qg) of 74 nC. Thermal resistance (RθJA) is 70 °C/W.

Single FETs, MOSFETs Feature Summary

• Advanced low voltage PowerTrench process technology designed for extremely low RDS(ON).
• Optimized specifically for battery power management applications requiring fast switching speeds.
• High power and current handling capability within a compact SuperSOT-8 package.

Single FETs, MOSFETs Applications

• Power management circuits
• Load switch implementations
• Battery protection systems

Single FETs, MOSFETs Procurement Notes

Verify the manufacturer origin, as Fairchild Semiconductor was acquired by onsemi. Confirm the specific datasheet revision (Rev A1(W)) matches your design requirements. Ensure the ordering suffix corresponds to the correct reel size and tape width specifications provided in the official documentation.

Single FETs, MOSFETs Selection Notes

Select this component when designing low-voltage P-Channel switching solutions requiring high efficiency. Evaluate the gate drive voltage levels against the specified RDS(ON) curves to ensure adequate conduction performance. Consider the thermal characteristics and safe operating area limits for your specific board layout and ambient temperature conditions.

Single FETs, MOSFETs Part Context

This device belongs to the PowerTrench family of MOSFETs, utilizing trench gate technology to minimize on-resistance. It is part of onsemi's portfolio of discrete power semiconductors aimed at improving efficiency in portable and battery-operated electronic devices through advanced packaging and material processes.

Single FETs, MOSFETs Replacement Considerations

Consult official cross-reference lists or distributor databases for verified equivalent parts from onsemi or other manufacturers. Ensure any substitute maintains compatible pinout, voltage ratings, and package dimensions for direct replacement.

Single FETs, MOSFETs FAQ

What is the maximum Drain-Source Voltage rating?

The absolute maximum Drain-Source Voltage (VDSS) is rated at -20 V.

How does the on-resistance vary with gate voltage?

RDS(ON) decreases as the magnitude of the gate-source voltage increases, measuring 20 mΩ at -1.8 V, 14 mΩ at -2.5 V, and 11 mΩ at -4.5 V.