FDS9412

Single FETs, MOSFETs Overview

The FDS9412 is a single N-Channel Enhancement Mode Field Effect Transistor manufactured using the PowerTrench process. It features a Drain-Source Voltage (VDSS) of 30 V and continuous Drain Current (ID) of 7.9 A. The device exhibits low on-state resistance, specified as 22 mΩ at VGS = 10 V and 36 mΩ at VGS = 4.5 V. Operating within a junction temperature range of -55°C to +150°C, it utilizes a SuperSOT-8 surface mount package.

Single FETs, MOSFETs Feature Summary

• Advanced PowerTrench technology designed to minimize on-state resistance while maintaining superior switching performance.
• Logic level capability enabling efficient operation with low gate drive voltages.
• High power and current handling capabilities integrated into a widely used surface mount package.

Single FETs, MOSFETs Applications

• Low voltage notebook computer DC-DC converters
• Applications requiring fast switching speeds
• Systems prioritizing low conduction loss and high efficiency

Single FETs, MOSFETs Procurement Notes

Verify component authenticity by checking manufacturer markings against datasheet specifications. Confirm package type matches the required SuperSOT-8 footprint. Ensure thermal management design accounts for junction-to-ambient resistance values provided in the electrical characteristics section. Validate that operating conditions remain within absolute maximum ratings for voltage, current, and temperature.

Single FETs, MOSFETs Selection Notes

Select this component for applications demanding low RDS(ON) at logic-level gate voltages. Consider the 30 V rating and 7.9 A continuous current capacity when sizing for load requirements. Evaluate thermal performance based on specific board copper pad sizes, as thermal resistance varies significantly with mounting area. Ensure gate drive signals align with the threshold voltage characteristics for reliable switching.

Single FETs, MOSFETs Part Context

This device belongs to the PowerTrench family of MOSFETs, characterized by trench gate technology for optimized performance. Manufactured originally by Fairchild Semiconductor, it represents a standard solution for low-voltage power switching applications where efficiency and speed are critical parameters.

Single FETs, MOSFETs Replacement Considerations

Check for direct cross-reference part numbers from current manufacturers holding the original Fairchild intellectual property. Verify pinout compatibility and package dimensions before substitution. Ensure replacement devices meet or exceed the 30 V breakdown voltage and 7.9 A current handling requirements.

Single FETs, MOSFETs FAQ

What is the typical on-state resistance at a gate-source voltage of 4.5 V?

The typical static drain-source on-resistance (RDS(on)) is 36 mΩ when tested at VGS = 4.5 V and ID = 6.2 A.

Does the FDS9412 include an internal body diode?

Yes, the datasheet specifies Drain-Source Diode Characteristics, including a maximum continuous forward current of 2 A and a forward voltage ranging from 0.7 V to 1.2 V at 25°C.