FDV301N

Single FETs, MOSFETs Overview

The FDV301N is an N-channel enhancement mode MOSFET manufactured by UMW. It features a 20 V drain-source voltage rating and supports a continuous drain current of 6 A at a case temperature of 25 °C. The device exhibits low on-state resistance, specified as 28 mΩ at VGS = 4.5 V, 42 mΩ at VGS = 2.5 V, and 50 mΩ at VGS = 1.8 V. It operates within a junction temperature range of -55 °C to 150 °C and is housed in a surface-mount SOT-23 package.

Single FETs, MOSFETs Feature Summary

• Low on-state resistance optimized for operation at gate-source voltages as low as 1.8 V
• High continuous drain current capability suitable for power switching applications
• Integrated body diode with defined reverse recovery characteristics

Single FETs, MOSFETs Applications

• DC/DC Converters
• Load Switch for Portable Applications

Single FETs, MOSFETs Procurement Notes

Verify the manufacturer designation matches UMW (UTD Semiconductor Co., Limited) when sourcing components, as the FDV301N part number is utilized by multiple semiconductor vendors. Confirm that the received devices are packaged in SOT-23 form factor and adhere to the specific electrical parameters outlined in the official UMW datasheet to ensure compatibility with the intended circuit design.

Single FETs, MOSFETs Selection Notes

Select this component for circuits requiring robust N-channel switching with low drive voltage requirements. The device is appropriate for portable equipment where minimizing conduction losses at reduced gate voltages is critical. Ensure the thermal management strategy accounts for the junction-to-ambient resistance ratings provided in the specifications to maintain safe operating temperatures under load.

Single FETs, MOSFETs Part Context

This component belongs to the category of N-channel MOSFETs designed for general-purpose switching. It is engineered to provide efficient control in low-voltage digital logic interfaces and power management systems. The SOT-23 packaging allows for compact integration into space-constrained printed circuit boards commonly found in modern consumer electronics and portable devices.

Single FETs, MOSFETs Replacement Considerations

Cross-reference with other manufacturers offering equivalent 20 V N-channel MOSFETs in SOT-23 packages. Verify pinout compatibility and ensure that alternative parts meet or exceed the required 6 A continuous drain current and low RDS(on) specifications at the target gate drive voltage.