Diode Arrays FEP16DT product image

FEP16DT

  • Description:DIODE ARRAY GP 200V 16A TO-220-3
  • Series:-

SKU:e1650e390a0c Category: Brand:

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FEP16DT is listed in the Diode Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is DIODE ARRAY GP 200V 16A TO-220-3. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for FEP16DT

  • Description:DIODE ARRAY GP 200V 16A TO-220-3
  • Series:-
  • Mfr:onsemi
  • Package:Tube
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):200 V
  • Current - Average Rectified (Io) (per Diode):16A
  • Voltage - Forward (Vf) (Max) @ If:950 mV @ 8 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):35 ns
  • Current - Reverse Leakage @ Vr:10 µA @ 200 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3
  • Supplier Device Package:TO-220-3
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for FEP16DT

FEP16DT

Diode Arrays Overview

The FEP16DT is a dual common cathode ultrafast plastic rectifier manufactured by onsemi. It features an average forward current of 16 A and a maximum repetitive reverse voltage of 200 V. The device exhibits a low forward voltage drop of 0.95 V at 8.0 A and a reverse recovery time of 35 ns. Electrical characteristics include a non-repetitive peak forward surge current of 200 A, a maximum reverse current of 10 µA at 25°C, and a total capacitance of 85 pF. Thermal resistance from junction to lead is 2.2 °C/W.

Diode Arrays Feature Summary

  • Dual common cathode configuration for efficient power conversion
  • Ultrafast recovery characteristics suitable for high-frequency applications
  • Glass passivated chip junction for enhanced reliability

Diode Arrays Applications

  • High frequency switching power supplies
  • Free wheeling diodes in DC-DC converters
  • Reverse polarity protection circuits

Diode Arrays Procurement Notes

Verify the manufacturer origin as Fairchild Semiconductor products are now part of onsemi. Confirm that the specific ordering suffix matches the required voltage rating and package type. Ensure compliance with RoHS standards if applicable to the specific revision. Check for any integration-related nomenclature changes regarding underscore versus dash usage in official documentation.

Diode Arrays Selection Notes

Select this component based on the 200 V reverse voltage requirement and 16 A continuous current capability. Consider the 35 ns reverse recovery time for high-speed switching efficiency. Evaluate thermal management requirements given the 8.33 W power dissipation limit. Compare against other series variants like FEP16AT or FEP16BT for different voltage ratings.

Diode Arrays Part Context

This component belongs to the FEP16AT through FEP16JT series of fast rectifiers. The series offers various voltage ratings from 50 V to 600 V while maintaining consistent current handling capabilities. These devices utilize TO-220AB packaging and are designed for general purpose rectification in demanding electronic environments.

Diode Arrays Replacement Considerations

Equivalent parts within the same series include FEP16AT, FEP16BT, FEP16CT, FEP16FT, FEP16GT, FEP16HT, and FEP16JT, which share identical physical dimensions and current ratings but differ in reverse voltage specifications.

Diode Arrays FAQ

What is the pin configuration for the FEP16DT?

Pin 1 is the positive terminal, Pin 2 is the case (common cathode), and Pin 3 is the negative terminal.

What is the maximum operating junction temperature?

The maximum operating junction temperature is +150 °C.

How does the reverse recovery time affect performance?

The 35 ns reverse recovery time allows for high-efficiency operation in high-frequency switching applications by minimizing switching losses.

FEP16DTFEP16DT

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