Diode Arrays FEPB16DT-E3/81 product image

FEPB16DT-E3/81

$0.75
  • Description:DIODE ARRAY GP 200V 8A TO263AB
  • Series:-

SKU:725d30643ccc Category: Brand:

  
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FEPB16DT-E3/81 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE ARRAY GP 200V 8A TO263AB. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for FEPB16DT-E3/81

  • Description:DIODE ARRAY GP 200V 8A TO263AB
  • Series:-
  • Mfr:Vishay General Semiconductor - Diodes Division
  • Package:Tape & Reel (TR)
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):200 V
  • Current - Average Rectified (Io) (per Diode):8A
  • Voltage - Forward (Vf) (Max) @ If:950 mV @ 8 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):35 ns
  • Current - Reverse Leakage @ Vr:10 µA @ 200 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Surface Mount
  • Package / Case:TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package:TO-263AB (D2PAK)
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for FEPB16DT-E3/81

FEPB16DT-E3/81

Diode Arrays Overview

The FEPB16DT-E3/81 is a dual common cathode ultrafast plastic rectifier manufactured by Vishay General Semiconductor. It utilizes a glass passivated pellet chip junction and is housed in a D2PAK (TO-263AB) surface-mount package. The device features a maximum repetitive peak reverse voltage of 200 V, a maximum average forward rectified current of 16 A at a case temperature of 100 °C, and a peak forward surge current of 125 A. Electrical characteristics include a maximum instantaneous forward voltage of 1.30 V per diode, a maximum DC reverse current of 10 μA at 25 °C, and a typical maximum reverse recovery time of 50 ns.

Diode Arrays Feature Summary

  • Ultrafast recovery time for high efficiency and low switching losses
  • Glass passivated pellet chip junction for high reliability
  • High forward surge capability
  • Meets MSL level 1 requirements

Diode Arrays Applications

  • High frequency rectification in switching mode power supplies
  • Inverter circuits
  • Freewheeling diodes
  • DC/DC converters
  • General power switching applications

Diode Arrays Procurement Notes

Verify the specific ordering code against the manufacturer's official documentation to ensure correct package type and suffix designation. Confirm RoHS compliance status and check for any regional distribution restrictions or discontinuance notifications prior to finalizing procurement plans.

Diode Arrays Selection Notes

Select this component for designs requiring fast switching speeds and robust surge handling in a compact surface-mount form factor. Ensure thermal management strategies account for the specified thermal resistance from junction to case to maintain safe operating temperatures under rated load conditions.

Diode Arrays Part Context

This part belongs to the FEPB16xT series of dual common cathode ultrafast rectifiers. The series offers various voltage ratings ranging from 50 V to 600 V, sharing identical current ratings and package options. The D2PAK variant provides a cost-effective surface-mount solution compared to through-hole alternatives within the same electrical family.

Diode Arrays Replacement Considerations

FEPB16CT-E3/81

Diode Arrays FAQ

What is the maximum repetitive peak reverse voltage for the FEPB16DT?

The maximum repetitive peak reverse voltage is 200 V.

Does the FEPB16DT-E3/81 meet automotive qualification standards?

No, the E3 suffix indicates commercial grade. Automotive qualification requires the HM3 suffix.

What is the typical reverse recovery time for this device?

The typical maximum reverse recovery time is 50 ns.

FEPB16DT-E3/81FEPB16DT-E3/81
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