Diode Arrays FEPE16DT-E3/45 product image

FEPE16DT-E3/45

  • Description:DIODE ARRAY GP 200V 16A TO-220-3
  • Series:-

SKU:afb1e7f61910 Category: Brand:

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FEPE16DT-E3/45 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE ARRAY GP 200V 16A TO-220-3. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for FEPE16DT-E3/45

  • Description:DIODE ARRAY GP 200V 16A TO-220-3
  • Series:-
  • Mfr:Vishay General Semiconductor - Diodes Division
  • Package:Tube
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):200 V
  • Current - Average Rectified (Io) (per Diode):16A
  • Voltage - Forward (Vf) (Max) @ If:950 mV @ 8 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):35 ns
  • Current - Reverse Leakage @ Vr:10 µA @ 200 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3
  • Supplier Device Package:TO-220-3
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for FEPE16DT-E3/45

FEPE16DT-E3/45

Diode Arrays Overview

The FEPE16DT-E3/45 is a Vishay General Semiconductor switch diode from the FEP16xT series, housed in a TO-220 package with three pins for through-hole mounting. It features a common cathode configuration and silicon junction technology. Key electrical parameters include a maximum continuous forward current of 16 A, a peak reverse repetitive voltage of 400 V, and a peak non-repetitive forward surge current of 125 A. The device exhibits a peak reverse recovery time of 50 ns, a maximum forward voltage of 1.3 V, and a peak reverse current of 10 μA. It operates within a temperature range of -55°C to +150°C and complies with RoHS standards.

Diode Arrays Feature Summary

  • High-speed switching capability with a 50 ns peak reverse recovery time
  • Robust thermal performance supporting operation up to 150°C junction temperature
  • Common cathode dual-diode configuration for efficient circuit integration
  • Compliance with automotive reliability standards including AEC-Q101

Diode Arrays Applications

  • High-frequency rectification in power supply circuits
  • Free-wheeling diodes in DC-DC converters
  • Snubber circuits for voltage spike suppression
  • Automotive electronics requiring AEC-Q101 compliance

Diode Arrays Procurement Notes

Verify the specific suffix against official Vishay documentation to confirm pinout and electrical tolerances. Confirm RoHS compliance status and AEC-Q101 qualification requirements for your application environment. Check for any recent product change notices or end-of-life notifications directly from the manufacturer before finalizing procurement plans.

Diode Arrays Selection Notes

Select this component when high-speed switching and high current handling are required in a through-hole package. The 400 V rating suits medium-voltage applications, while the 16 A capacity supports substantial load currents. Ensure the TO-220 footprint fits the PCB layout and that the thermal management strategy accommodates the 150°C maximum operating temperature.

Diode Arrays Part Context

This part belongs to Vishay's FEP16xT series of fast recovery epitaxial planar diodes. These components are designed for general-purpose high-speed switching applications. The series offers various voltage ratings and configurations, providing designers with flexible options for power conversion and protection circuits across industrial and automotive sectors.

Diode Arrays Replacement Considerations

Direct substitutes within the same series include FEP16GT-E3/45 and FEP16FT-E3/45. Verify compatibility regarding voltage ratings and package dimensions before substitution. Cross-reference datasheets to ensure equivalent reverse recovery times and forward voltage characteristics match the original design requirements.

FEPE16DT-E3/45FEPE16DT-E3/45

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