Diode Arrays FFAF10U120DNTU product image

FFAF10U120DNTU

$1.27
  • Description:DIODE ARRAY GP 1200V 10A TO-3PF
  • Series:-

SKU:60e4b12104c8 Category: Brand:

  
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FFAF10U120DNTU is listed in the Diode Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is DIODE ARRAY GP 1200V 10A TO-3PF. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for FFAF10U120DNTU

  • Description:DIODE ARRAY GP 1200V 10A TO-3PF
  • Series:-
  • Mfr:onsemi
  • Package:Tube
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):1200 V
  • Current - Average Rectified (Io) (per Diode):10A
  • Voltage - Forward (Vf) (Max) @ If:3.5 V @ 10 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):100 ns
  • Current - Reverse Leakage @ Vr:10 µA @ 1200 V
  • Operating Temperature - Junction:-65°C ~ 150°C
  • Mounting Type:Through Hole
  • Package / Case:TO-3P-3 Full Pack
  • Supplier Device Package:TO-3PF
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for FFAF10U120DNTU

FFAF10U120DNTU

Diode Arrays Overview

The FFAF10U120DNTU is a dual common cathode ultra-fast recovery power rectifier manufactured by onsemi. It features a peak repetitive reverse voltage of 1200 V and an average forward current rating of 10 A at a case temperature of 100°C. The device operates within a junction and storage temperature range of -65 to +150°C. Key electrical characteristics include a maximum instantaneous forward voltage of 3.5 V at 10 A, a maximum reverse current of 10 µA at 25°C, and a maximum reverse recovery time of 100 ns. The component utilizes a TO-3PF package with a thermal resistance from junction to case of 1.5°C/W.

Diode Arrays Feature Summary

  • Ultra-fast recovery performance for high-speed switching applications
  • High voltage capability with 1200 V reverse voltage rating
  • Low forward voltage drop for improved efficiency
  • Robust construction ensuring high reliability

Diode Arrays Applications

  • Switching mode power supplies
  • Free-wheeling diodes for motor applications
  • General purpose power switching circuits

Diode Arrays Procurement Notes

Verify the specific manufacturer origin, as this part was originally produced by Fairchild Semiconductor before its acquisition by onsemi. Confirm that the TO-3PF package dimensions and pinout match your design requirements. Ensure compliance with any relevant RoHS directives applicable to your region. Check for availability status, as older components may be subject to discontinuation or limited stock.

Diode Arrays Selection Notes

Select this component for designs requiring fast recovery times and high voltage blocking capabilities in through-hole configurations. Consider the thermal resistance and derating curves when determining heat sink requirements for continuous operation. Evaluate the surge current rating against potential transient loads in the circuit. Ensure the operating temperature range aligns with the environmental conditions of the final application.

Diode Arrays Part Context

This component belongs to the family of ultra-fast recovery power rectifiers designed for demanding power electronics applications. Originally developed by Fairchild Semiconductor, it represents a standard solution for high-voltage, medium-current rectification tasks. The TO-3PF package provides robust mechanical stability and efficient heat dissipation compared to smaller surface-mount alternatives.

Diode Arrays Replacement Considerations

Direct substitutes include the FFAF10U120DN. Verify compatibility regarding package type and electrical specifications before substitution.

Diode Arrays FAQ

What is the maximum reverse recovery time for this rectifier?

The maximum reverse recovery time is 100 ns under specified test conditions.

Can this device be used as a free-wheeling diode?

Yes, the datasheet explicitly lists free-wheeling diodes for motor applications as a valid use case.

What is the thermal resistance from junction to case?

The maximum thermal resistance from junction to case is 1.5°C/W.

FFAF10U120DNTUFFAF10U120DNTU
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