FFPF10U60DNTU

Diode Arrays Overview

The FFPF10U60DNTU is a dual common cathode ultra-fast recovery power rectifier manufactured by onsemi. It features a peak repetitive reverse voltage of 600 V and an average rectified forward current of 10 A per diode at a case temperature of 100°C. The device exhibits a maximum instantaneous forward voltage of 2.2 V at 10 A and 25°C, with a non-repetitive peak surge current capability of 60 A. Key electrical characteristics include a maximum reverse recovery time of 90 ns, a maximum reverse recovery charge of 270 nC, and a maximum thermal resistance from junction to case of 2.5 °C/W.

Diode Arrays Feature Summary

• High-speed switching performance suitable for demanding power conversion applications
• Low forward voltage drop to minimize conduction losses
• High reliability construction designed for high voltage environments

Diode Arrays Applications

• Switching mode power supplies
• Free-wheeling diodes for motor applications
• General purpose power switching circuits

Diode Arrays Procurement Notes

Verify the component status carefully as this part number may be discontinued or obsolete depending on the specific manufacturing lot and date code. Confirm that the TO-220F package dimensions match your PCB footprint requirements. Ensure the supplier provides original manufacturer documentation to validate authenticity and traceability before finalizing any acquisition.

Diode Arrays Selection Notes

Select this component when designing circuits requiring fast recovery characteristics combined with moderate current handling capabilities. The dual common cathode configuration allows for efficient bridge or center-tapped rectification in compact designs. Evaluate the thermal management strategy to ensure the junction temperature remains within the specified -65°C to +150°C operating range under all load conditions.

Diode Arrays Part Context

This device belongs to the FFPF series of ultra-fast recovery power rectifiers originally developed by Fairchild Semiconductor. The series is characterized by its robust silicon planar epitaxial construction and optimized doping profiles for rapid reverse recovery. The TO-220F package provides isolated mounting capabilities for effective heat dissipation in industrial and commercial power electronics systems.

Diode Arrays Replacement Considerations

Consult official cross-reference lists for verified substitutes such as the FFPF10U60DN. Ensure any replacement maintains identical pinout configurations, voltage ratings, and thermal resistance values to guarantee circuit compatibility without redesign.

Diode Arrays FAQ

What is the maximum reverse recovery time for this rectifier?

The maximum reverse recovery time (trr) is 90 ns when tested at an forward current of 10 A and a di/dt of 200 A/µs.

How is the internal structure configured?

The device contains two independent rectifier elements connected in a common cathode configuration within a single TO-220F package.

What is the avalanche energy rating?

The device has a rated avalanche energy capacity of 1.0 mJ.