FFPF60SB60DSTU

Diode Arrays Overview

The FFPF60SB60DSTU is a 4 A, 600 V STEALTH II rectifier featuring soft recovery characteristics. It utilizes silicon nitride passivated ion-implanted epitaxial planar construction. The device provides high reverse voltage capability and reliability with a peak repetitive reverse voltage of 600 V. It operates within a junction temperature range of -65 to +150 °C and includes avalanche energy ratings for robust performance in power switching applications.

Diode Arrays Feature Summary

• Soft recovery characteristics minimize ringing and electrical noise
• Low stored charge reduces power loss in switching transistors
• High speed switching with hyperfast recovery times

Diode Arrays Applications

• Freewheeling diodes in switching power supplies
• Boost diodes in continuous mode power factor corrections
• General purpose power switching circuits

Diode Arrays Procurement Notes

Verify the component matches the specific Fairchild Semiconductor datasheet Rev. A specifications. Confirm the TO220F package marking aligns with the required circuit layout. Ensure compliance with RoHS standards if mandated by the design requirements. Cross-reference the ordering suffix TU with the manufacturer's current production status.

Diode Arrays Selection Notes

Select this component for applications requiring low reverse recovery charge to enhance efficiency. Consider the thermal resistance of 8.7 °C/W for heat dissipation planning. Evaluate the forward voltage drop at expected operating currents to determine conduction losses. Verify that the 4 A average rectified current rating meets the peak load demands of the target circuit.

Diode Arrays Part Context

This part belongs to the STEALTH II rectifier family developed by Fairchild Semiconductor. It is designed specifically for high-frequency power conversion where minimizing switching losses is critical. The technology integrates soft recovery features to reduce electromagnetic interference compared to standard ultrafast rectifiers.

Diode Arrays Replacement Considerations

FFPF60SA60DS

Diode Arrays FAQ

What is the maximum non-repetitive peak surge current?

The maximum non-repetitive peak surge current is 40 A for a 60 Hz single half-sine wave.

How does the device handle reverse recovery?

It features soft recovery characteristics with a typical reverse recovery time of less than 25 ns at 4 A forward current.

What is the avalanche energy rating?

The avalanche energy rating is 5 mJ when tested with an inductance of 40 mH.