Single Diodes FFSD1065B product image

FFSD1065B

$2.64
  • Description:DIODE SIL CARB 650V 13.5A TO252
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:80c1221b7e64 Category: Brand:

  
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FFSD1065B is listed in the Single Diodes range at ChipApex. The manufacturer field lists onsemi. Its product description is DIODE SIL CARB 650V 13.5A TO252. Review the specifications below when checking this part for your BOM.

Single Diodes specifications for FFSD1065B

  • Description:DIODE SIL CARB 650V 13.5A TO252
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max):650 V
  • Current - Average Rectified (Io):13.5A
  • Voltage - Forward (Vf) (Max) @ If:1.7 V @ 10 A
  • Speed:No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr):0 ns
  • Current - Reverse Leakage @ Vr:40 µA @ 650 V
  • Capacitance @ Vr, F:424pF @ 1V, 100kHz
  • Mounting Type:Surface Mount
  • Package / Case:TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package:TO-252 (DPAK)
  • Operating Temperature - Junction:-55°C ~ 175°C
  • Grade:-
  • Qualification:-

Single Diodes datasheet and documents for FFSD1065B

FFSD1065B

Single Diodes Overview

The FFSD1065B is a silicon carbide Schottky diode manufactured by onsemi, designed for high-efficiency power conversion applications. It features a 650 V maximum repetitive reverse voltage and an average forward current rating of 13.5 A. The device utilizes a TO-252 (DPAK) surface-mount package with three pins. Key electrical characteristics include a typical forward voltage of 1.7 V at 8 A and a peak non-repetitive forward surge current capability of 650 A. It operates within a junction temperature range of -55°C to +175°C.

Single Diodes Feature Summary

  • Zero reverse recovery time inherent to the Schottky barrier structure
  • High thermal stability supporting operation up to 175°C junction temperature
  • Low forward voltage drop for improved conduction efficiency

Single Diodes Applications

  • DC-DC converters
  • Power factor correction circuits
  • Solar micro-inverters

Single Diodes Procurement Notes

Verify the specific suffix designation against official datasheets to confirm exact electrical tolerances and packaging configurations. Ensure compatibility with standard TO-252 footprints during PCB layout. Confirm RoHS compliance status through manufacturer documentation prior to integration into regulated assemblies.

Single Diodes Selection Notes

Select this component for designs requiring low switching losses and high-temperature resilience. Compare the 13.5 A continuous current rating against peak load requirements. Evaluate the TO-252 package thermal resistance relative to available heatsinking solutions to maintain safe operating temperatures under full load conditions.

Single Diodes Part Context

This device belongs to onsemi's EliteSiC series of silicon carbide power diodes. It represents a generation of wide-bandgap semiconductors engineered to replace traditional silicon rectifiers in high-frequency and high-voltage environments. The technology enables significant reductions in system size and weight while improving overall energy efficiency.

Single Diodes Replacement Considerations

Cross-reference with other 650V SiC Schottky diodes in the TO-252 package from onsemi or alternative manufacturers. Verify pinout compatibility and thermal performance metrics before substitution.

FFSD1065BFFSD1065B
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