FFSH2065BDN

Diode Arrays Overview

The onsemi FFSH2065BDN is a Silicon Carbide (SiC) Schottky diode from the EliteSiC series, housed in a TO-247-3LD package. It features a peak repetitive reverse voltage of 650 V and a continuous forward current rating of 20 A per device (10 A per leg). The component supports a maximum junction temperature of 175°C and offers an avalanche energy rating of 49 mJ. Electrical characteristics include a typical forward voltage of 1.38 V at 10 A and 25°C, with a maximum reverse current of 160 μA at 175°C.

Diode Arrays Feature Summary

• Eliminates reverse recovery current for superior switching performance
• Features positive temperature coefficient to facilitate ease of paralleling
• Provides high surge current capacity and avalanche rated robustness
• Exhibits temperature independent switching characteristics

Diode Arrays Applications

• Switching Mode Power Supplies (SMPS)
• Solar Inverters
• Uninterruptible Power Supplies (UPS)
• General Purpose Power Switching Circuits

Diode Arrays Procurement Notes

Verify the specific ordering suffix 'DN' against official documentation to confirm the exact shipping configuration, as it indicates tube packaging. Ensure that the thermal management design accommodates the specified junction-to-case thermal resistance values under actual operating conditions. Confirm compliance requirements such as RoHS and Pb-Free status align with project specifications before finalizing procurement.

Diode Arrays Selection Notes

Select this component when high efficiency and reduced electromagnetic interference are required due to the absence of reverse recovery charge. Consider the TO-247-3LD package for through-hole mounting applications requiring high power density. Evaluate the 49 mJ avalanche rating for circuits prone to inductive switching stress. Verify that the system can support the 175°C maximum junction temperature capability for optimal thermal performance.

Diode Arrays Part Context

This device belongs to the EliteSiC series of silicon carbide Schottky diodes manufactured by onsemi. The series utilizes advanced SiC technology to replace traditional silicon rectifiers, offering higher reliability and faster operating frequencies. The FFSH2065BDN specifically targets high-voltage applications where low conduction losses and high thermal stability are critical for system performance.

Diode Arrays Replacement Considerations

Consult official cross-reference lists or datasheets for verified substitutes within the same EliteSiC family or comparable 650V SiC Schottky diodes from other manufacturers. Ensure any replacement matches the TO-247-3LD footprint and maintains equivalent electrical ratings for avalanche energy and forward current.

Diode Arrays FAQ

What is the avalanche energy rating of the FFSH2065BDN?

The device is avalanche rated with a single pulse avalanche energy of 49 mJ.

How does the forward current distribute in the TO-247-3LD package?

The continuous forward current is rated at 20 A per device, which corresponds to 10 A per leg.

Does this diode exhibit reverse recovery current?

No, the Silicon Carbide Schottky diode has no reverse recovery current, contributing to its high switching efficiency.