FFSH4065ADN-F155

Diode Arrays Overview

The FFSH4065ADN-F155 is a Silicon Carbide (SiC) Schottky diode from onsemi’s EliteSiC series, housed in a TO-247-3 package. It features a common cathode dual anode configuration with a 650V repetitive reverse voltage rating and a 40A forward current capacity. Key electrical parameters include a maximum forward voltage of 1.75V, a reverse leakage current of 200uA, and a forward surge current of 80A. The device supports operation between -55°C and +175°C, dissipating up to 110W of power.

Diode Arrays Feature Summary

• Utilizes silicon carbide technology for superior switching performance compared to traditional silicon devices.
• Features a common cathode dual anode configuration suitable for bridge rectifier applications.
• Designed for high-temperature operation with a maximum junction temperature of 175°C.

Diode Arrays Applications

• High-efficiency DC/DC converters
• Uninterruptible power supplies (UPS)
• Industrial motor drives

Diode Arrays Procurement Notes

Verify the specific suffix F155 against official datasheets to confirm tube packaging details. Ensure compatibility with TO-247-3 mounting requirements. Cross-reference thermal resistance values for your specific heatsink design. Confirm RoHS compliance status through manufacturer documentation before finalizing procurement specifications.

Diode Arrays Selection Notes

Select this component when system requirements demand low reverse recovery charge and high-temperature resilience. The 650V rating suits medium-voltage applications, while the 40A current capability supports moderate power levels. Consider the TO-247-3 form factor for through-hole assembly constraints and verify that the 1.75V forward voltage drop aligns with efficiency targets.

Diode Arrays Part Context

This part belongs to onsemi’s EliteSiC family, which leverages advanced silicon carbide manufacturing for enhanced power density. The FFSH4065ADN-F155 represents a discrete solution within a broader portfolio of SiC Schottky diodes designed to replace silicon counterparts in demanding power electronics environments.

Diode Arrays Replacement Considerations

Direct substitutes may include other 650V SiC Schottky diodes in TO-247-3 packages from manufacturers like STMicroelectronics or Vishay. Verify pinout compatibility and thermal characteristics. Ensure equivalent or superior current ratings and reverse voltage capabilities are maintained during substitution.

Diode Arrays FAQ

What is the maximum operating junction temperature?

The maximum operating junction temperature is 175°C.

Is this device available in a surface-mount package?

No, the FFSH4065ADN-F155 is specified for through-hole installation in a TO-247-3 package.