FJC1308PTF

Single Bipolar Transistors Overview

The FJC1308PTF is a PNP epitaxial silicon transistor manufactured by onsemi, formerly Fairchild Semiconductor. It is housed in an SOT-89 surface-mount package and designed for audio power amplifier applications. The device supports a maximum collector current of -3 A and a collector-emitter voltage of -30 V. Key electrical characteristics include a DC current gain (hFE) ranging from 80 to 390 depending on the grade, a collector-base breakdown voltage of -30 V, and a collector-emitter saturation voltage of -0.45 V at -1.5 A collector current.

Single Bipolar Transistors Feature Summary

• Designed specifically for audio power amplifier applications
• Features low collector-emitter saturation voltage for efficient operation
• Supports high collector current capability

Single Bipolar Transistors Applications

• Audio power amplifiers

Single Bipolar Transistors Procurement Notes

Verify the manufacturer origin, as the component was originally produced by Fairchild Semiconductor before its acquisition by onsemi. Confirm the specific hFE binning grade required for your circuit design, as performance varies across the P, Q, and R classifications. Ensure the SOT-89 package dimensions align with your PCB footprint requirements.

Single Bipolar Transistors Selection Notes

Select this component when designing audio power stages requiring a complementary PNP transistor to match the NPN FJC1963. Consider the thermal dissipation limits, which are rated at 0.5 W at a case temperature of 25°C. Evaluate the required hFE grade based on the necessary drive current and gain stability for your specific amplifier topology.

Single Bipolar Transistors Part Context

This part belongs to the FJC series of power transistors optimized for audio applications. It serves as the complementary counterpart to the NPN FJC1963, allowing for matched pairs in push-pull output stages. The series is characterized by high current handling and low saturation voltages suitable for high-fidelity audio reproduction.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly identifies the FJC1963 as the complementary NPN device. No other direct substitute part numbers are documented in the provided source material.