FJP13009TU

Single Bipolar Transistors Overview

The FJP13009TU is a high-voltage, fast-switching NPN silicon epitaxial planar transistor manufactured by onsemi. It features a collector-base voltage of 700 V and a collector-emitter voltage of 400 V. The device supports a continuous DC collector current of 12 A and a peak pulse current of 24 A. Total power dissipation reaches 100 W at a case temperature of 25 °C. The junction temperature maximum is 150 °C. The unit utilizes the industry-standard TO-220-3LD package for through-hole mounting.

Single Bipolar Transistors Feature Summary

• High-voltage capability with a 700 V collector-base rating
• Fast switching speed suitable for high-frequency applications
• Designed for excellent power dissipation in standard packages

Single Bipolar Transistors Applications

• Electronic ballasts
• Switching regulators
• Motor control systems
• Switched mode power supplies

Single Bipolar Transistors Procurement Notes

Verify the specific hFE bin class required for the design, as the base part number covers multiple gain classifications. Confirm that the tube packaging format aligns with assembly equipment capabilities. Ensure thermal management strategies account for the 100 W dissipation limit at 25 °C case temperature. Validate compliance with relevant safety standards for the intended application environment before finalizing procurement.

Single Bipolar Transistors Selection Notes

Select this component when high voltage blocking and rapid switching are critical requirements. The TO-220-3LD package provides robust mechanical stability and efficient heat transfer for through-hole designs. Consider the available hFE bins to optimize drive circuit complexity. Evaluate the safe operating area curves to ensure operation remains within limits during transient conditions.

Single Bipolar Transistors Part Context

This device belongs to the FJP13009 series of high-voltage NPN transistors. It is engineered specifically for demanding power electronics environments where reliability under high stress is essential. The epitaxial planar construction ensures consistent performance characteristics across production batches.

Single Bipolar Transistors Replacement Considerations

FJP13009H2TU serves as an alternative variant within the same series, distinguished by its specific hFE classification grade.