FJP5021OTU

Single Bipolar Transistors Overview

The onsemi FJP5021OTU is an NPN silicon power transistor housed in a TO-220 package. It features a collector-emitter voltage (VCEO) of 500 V and a collector-base voltage (VCBO) of 800 V. The device supports a continuous DC collector current of 5 A and a pulse current of 10 A, with a maximum power dissipation of 50 W at 25°C case temperature. Key electrical characteristics include a minimum DC current gain (hFE) ranging from 8 to 50 depending on the classification, a transition frequency (fT) of 18 MHz, and a typical fall time of 0.1 µs.

Single Bipolar Transistors Feature Summary

• High-speed switching capability with a typical fall time of 0.1 µs
• Wide Safe Operating Area (SOA) for robust performance under varying load conditions
• High reliability construction suitable for demanding power applications

Single Bipolar Transistors Applications

• High voltage switching circuits
• Power amplifier stages
• Inverter designs

Single Bipolar Transistors Procurement Notes

Verify the manufacturer origin carefully, as this component was originally produced by Fairchild Semiconductor before its acquisition by onsemi. Confirm that the specific ordering suffix matches the required pinout and packaging specifications for your design. Ensure compliance with RoHS directives if applicable to your manufacturing standards.

Single Bipolar Transistors Selection Notes

Select this component when high voltage blocking capabilities above 500 V are required alongside moderate current handling up to 5 A. Consider the thermal management requirements associated with the TO-220 package and the 50 W power dissipation rating. Evaluate the hFE classification bin to ensure sufficient current gain for your specific drive circuit requirements.

Single Bipolar Transistors Part Context

This part belongs to the FJP5021 series of high-voltage NPN transistors. Originally manufactured by Fairchild Semiconductor, these devices are designed for general-purpose high-voltage switching applications. The series is characterized by its ability to handle significant voltage stress while maintaining fast switching speeds.

Single Bipolar Transistors Replacement Considerations

Direct substitutes may include other NPN transistors with similar voltage ratings (VCEO >= 500 V) and current capacity (IC >= 5 A). Verify pin compatibility and thermal resistance values before substitution.

Single Bipolar Transistors FAQ

What is the typical fall time for the FJP5021?

The typical fall time (tF) is 0.1 µs.

What is the maximum collector-base voltage?

The maximum collector-base voltage (VCBO) is 800 V.

Is this device suitable for life support systems?

No, the datasheet explicitly states that products are not authorized for use as critical components in life support devices without express written approval.