FJP5027O

Single Bipolar Transistors Overview

The onsemi FJP5027O is a single NPN bipolar junction transistor (BJT) designed for high-voltage power switching applications. It features a collector-emitter breakdown voltage of 800 V and a collector-base voltage rating of 1.1 kV, with an emitter-base voltage limit of 7 V. The device supports a maximum continuous DC collector current of 3 A and a peak collector current of 1.5 A. Key electrical parameters include a minimum DC current gain (hFE) of 20, a transition frequency (fT) of 15 MHz, and a collector-emitter saturation voltage of 2 V at specified test conditions. Power dissipation capabilities reach up to 50 W, operating within a temperature range extending to +150°C.

Single Bipolar Transistors Feature Summary

• High-voltage capability with 800 V collector-emitter and 1.1 kV collector-base ratings for robust power switching
• Designed for through-hole mounting in TO-220 packages to facilitate thermal management in high-power circuits
• Optimized for high-frequency operation with a 15 MHz transition frequency suitable for demanding switching environments

Single Bipolar Transistors Applications

• High-voltage flyback transformer drivers in switch-mode power supplies
• Resonant tank circuits in induction heating systems
• Inverter stages in motor control drives requiring high blocking voltage

Single Bipolar Transistors Procurement Notes

Verify the exact suffix against official datasheets, as variations like OTU or TU indicate specific package types such as TO-220F or standard TO-220AB. Confirm RoHS compliance status and lead times directly with authorized distributors. Ensure the ordering part number matches the required pinout and thermal characteristics for your specific PCB layout constraints.

Single Bipolar Transistors Selection Notes

Select this component when circuit designs demand high voltage isolation combined with moderate current handling capabilities. The TO-220 package provides a reliable solution for applications requiring efficient heat dissipation without complex cooling structures. Evaluate the 15 MHz transition frequency to ensure suitability for the target switching speed requirements of the power supply topology.

Single Bipolar Transistors Part Context

This device belongs to the FJP series of high-voltage NPN transistors manufactured by onsemi. The series is engineered for general-purpose power switching where high voltage blocking is critical. The FJP5027 variant specifically addresses needs for robust performance in industrial and consumer electronics power conversion stages.

Single Bipolar Transistors Replacement Considerations

Cross-reference with FJPF5027TU for equivalent specifications in a TO-220F package. Verify that any substitute maintains the same 800 V/3A ratings and compatible pinout configuration to ensure direct interchangeability in existing designs.