Single Bipolar Transistors FJP5304DTU product image

FJP5304DTU

$0.33
  • Description:TRANS NPN 400V 4A TO-220-3
  • Series:-

SKU:a0fd66f60a60 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

FJP5304DTU is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 400V 4A TO-220-3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for FJP5304DTU

  • Description:TRANS NPN 400V 4A TO-220-3
  • Series:-
  • Mfr:onsemi
  • Package:Tube,Tube
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):4:00 AM
  • Voltage - Collector Emitter Breakdown (Max):400 V
  • Vce Saturation (Max) @ Ib, Ic:1.5V @ 500mA, 2.5A
  • Current - Collector Cutoff (Max):250mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:8 @ 2A, 5V
  • Power - Max:70 W
  • Frequency - Transition:-
  • Operating Temperature:-
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3
  • Supplier Device Package:TO-220-3

Single Bipolar Transistors datasheet and documents for FJP5304DTU

FJP5304DTU

Single Bipolar Transistors Overview

The FJP5304DTU is a single NPN triple diffused planar silicon bipolar junction transistor manufactured by onsemi. It is housed in a TO-220AB flange mount package with three terminals. The device supports a maximum collector current of 4 A and a collector-emitter voltage rating of 400 V. It features a minimum DC current gain (hFE) of 8 and operates at temperatures up to 150 °C. The component includes a built-in diode configuration and complies with lead-free and RoHS standards.

Single Bipolar Transistors Feature Summary

  • Triple diffused planar silicon construction for robust performance
  • Integrated built-in diode within the single NPN configuration
  • High voltage capability suitable for demanding power applications

Single Bipolar Transistors Applications

  • High voltage switching circuits
  • Power amplifier stages
  • Industrial control systems

Single Bipolar Transistors Procurement Notes

Verify the manufacturer part number against official onsemi documentation to ensure authenticity. Confirm that the TO-220AB package and pinout match design requirements. Check for specific ordering suffixes if different thermal or electrical variants are needed. Ensure compliance with project-specific environmental regulations such as RoHS and lead-free status before procurement.

Single Bipolar Transistors Selection Notes

Select this component when a high-voltage NPN BJT with 400 V breakdown is required. The 4 A current rating and integrated diode simplify circuit design for specific power topologies. Consider the TO-220 package for adequate heat dissipation in flange-mounted applications. Verify that the minimum hFE of 8 meets the drive requirements of the target circuit.

Single Bipolar Transistors Part Context

This component belongs to the family of discrete bipolar transistors offered by onsemi. It utilizes planar technology for consistent electrical characteristics. The TO-220 package is standard for through-hole mounting in power electronics. The product line focuses on reliable performance for industrial and consumer power management solutions.

Single Bipolar Transistors Replacement Considerations

Consult official cross-reference guides for verified substitutes. Ensure any replacement matches the 400 V, 4 A specifications and TO-220 package. Verify pin compatibility and electrical parameters before substitution.

FJP5304DTUFJP5304DTU
$0.33
Buy Now

Recent News