FMMT416TA

Single Bipolar Transistors Overview

The FMMT416TA is an NPN high-voltage avalanche transistor manufactured by Diodes Incorporated. It operates in a SOT-23 package and is specifically designed for avalanche mode applications. Key electrical parameters include a collector-base breakdown voltage exceeding 315V, a collector-emitter breakdown voltage greater than 100V, and a continuous collector current rating of 500mA. The device supports a peak avalanche current of 60A with a pulse width of 20ns. Thermal characteristics specify a maximum power dissipation of 500mW and a junction-to-ambient thermal resistance of 250°C/W. The operating temperature range spans from -55°C to +150°C.

Single Bipolar Transistors Feature Summary

• Engineered for high-voltage avalanche mode operation with tight process control.
• Low inductance packaging facilitates the generation of high-current pulses with fast edges.
• Compliant with RoHS directives and halogen-free standards.

Single Bipolar Transistors Applications

• Laser diode drivers for ranging and measurement (LIDAR)
• Radar systems
• Fast edge switch generators
• High-speed pulse generators

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix 'TA' against official documentation to confirm the 3000-unit reel quantity. Confirm that the component meets AEC-Q101 standards if automotive qualification is required. Ensure design compliance with the manufacturer's recommendation regarding new designs. Validate all absolute maximum ratings against the target application environment before procurement.

Single Bipolar Transistors Selection Notes

Select this component for circuits requiring high-voltage switching in avalanche mode. The SOT-23 package suits surface-mount designs with space constraints. Evaluate the 500mW power dissipation limit under expected ambient conditions. Consider the transition frequency and output capacitance for high-speed signal integrity requirements.

Single Bipolar Transistors Part Context

The FMMT416 belongs to the FMMT416 series of NPN silicon planar bipolar transistors. It shares the same core specifications as the FMMT416TD variant, differing primarily in packaging quantities. The device utilizes a molded plastic case with matte tin-plated leads. It is classified as a green device free from intentionally added lead, bromine, chlorine, and antimony compounds.

Single Bipolar Transistors Replacement Considerations

Consult the manufacturer for approved substitutes. Verify pinout compatibility and electrical parameter alignment for any alternative components.

Single Bipolar Transistors FAQ

What is the peak avalanche current capability of the FMMT416?

The FMMT416 supports a peak collector current of 60A with a pulse width of 20ns.

Is the FMMT416 recommended for new designs?

No, the datasheet explicitly states that the FMMT416 is not recommended for new designs and advises contacting the manufacturer.

What is the maximum collector-base breakdown voltage?

The collector-base breakdown voltage (BVCBO) exceeds 315V at a test current of 100µA.