FMMT495TA

Single Bipolar Transistors Overview

The FMMT495TA is a single NPN silicon planar medium power transistor manufactured by Diodes Incorporated. It is housed in an SOT-23 surface-mount package and rated for a collector-emitter voltage (VCEO) of 150 V, with a collector-base voltage (VCBO) of 170 V and an emitter-base voltage (VEBO) of 7 V. The device supports a continuous collector current (IC) of 1 A and a peak pulse current (ICM) of 2 A. Electrical characteristics include a transition frequency (fT) of 100 MHz at 50 mA, static forward current transfer ratio (hFE) ranging from 10 to 300 depending on the test condition, and a maximum collector cutoff current (ICBO) of 100 nA. Power dissipation is limited to 500 mW, with an operating temperature range spanning -55°C to +150°C.

Single Bipolar Transistors Feature Summary

• High voltage capability exceeding 150 V collector-emitter breakdown
• Characterized high current gain up to 1 A for hold-up applications
• Qualified to AEC-Q101 standards for automotive reliability
• Lead-free and fully RoHS compliant construction

Single Bipolar Transistors Applications

• Automotive electronic systems requiring high reliability
• General-purpose switching circuits
• Amplifier stages utilizing high current gain characteristics
• Power management modules within industrial equipment

Single Bipolar Transistors Procurement Notes

Verify that the specific ordering suffix matches the required packaging quantity. The 'TA' designation indicates a reel size of 7 inches containing 3,000 units per reel. Confirm compliance requirements such as PPAP capability if the application demands automotive-grade documentation. Ensure the procurement channel provides original manufacturer documentation to validate authenticity and traceability.

Single Bipolar Transistors Selection Notes

Select this component when a single NPN transistor requires a minimum 150 V collector-emitter rating combined with a 1 A continuous current capacity. The SOT-23 package is suitable for space-constrained printed circuit board layouts. Consider the thermal resistance of 250 °C/W when designing heat dissipation strategies for steady-state operations. Evaluate the hFE range against the specific drive requirements of the target circuit.

Single Bipolar Transistors Part Context

This part belongs to the FMMT495 series of medium power transistors produced by Diodes Incorporated. The series utilizes silicon planar technology optimized for robust performance in compact surface-mount environments. The FMMT495TA variant specifically denotes the standard tape-and-reel packaging format intended for automated assembly processes.

Single Bipolar Transistors Replacement Considerations

The FMMT495TC serves as a direct alternative offering identical electrical specifications but packaged in a 13-inch reel containing 10,000 units. Both variants share the same marking code and physical footprint.