FQA27N25

Single FETs, MOSFETs Overview

The FQA27N25 is a single N-channel enhancement mode MOSFET manufactured by onsemi under the QFET trademark. It utilizes silicon technology and is housed in a TO-3PN-3 through-hole package with a flange mount configuration. The device features a drain-source breakdown voltage of 250 V and supports a continuous drain current of 27 A. Its maximum drain-source on-resistance is specified at 110 mOhms, while the gate-source voltage range extends from -30 V to +30 V. The component operates within a temperature range of -55 C to +150 C, offering a power dissipation capacity of 210 W.

Single FETs, MOSFETs Feature Summary

• Single N-channel enhancement mode operation for high-side or low-side switching applications
• QFET technology designed for fast switching speeds and simplified drive circuitry
• Robust thermal management capabilities via flange mount construction

Single FETs, MOSFETs Applications

• High-voltage DC-DC converter circuits
• Motor control systems requiring robust switching
• Industrial power supply designs

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels due to discontinued status. Confirm RoHS compliance details and specific lot markings against official datasheets. Ensure storage conditions remain within specified limits to prevent degradation. Validate package integrity upon receipt to ensure proper mounting compatibility.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring 250 V blocking capability with moderate current handling. Consider the TO-3PN-3 package for efficient heat dissipation in chassis-mounted designs. Evaluate gate charge requirements against available driver strength. Compare on-resistance values with alternative devices if lower conduction losses are critical.

Single FETs, MOSFETs Part Context

This part belongs to the QFET family of power MOSFETs from onsemi, known for optimized switching performance. The TO-3PN-3 package provides a standard form factor for industrial electronics. As a discrete semiconductor device, it serves as a fundamental building block for power conversion stages in various electronic systems.

Single FETs, MOSFETs Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical specifications before considering any alternative components.