FQA33N10

$0.63

Description：MOSFET N-CH 100V 36A TO3P
Series：QFET®
Mfr：onsemi
Package：Tube

SKU:8a26de24b2d0 Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

FQA33N10 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 100V 36A TO3P. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for FQA33N10

Description：MOSFET N-CH 100V 36A TO3P
Series：QFET®
Mfr：onsemi
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：36A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：52mOhm @ 18A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：51 nC @ 10 V
Vgs (Max)：±25V
Input Capacitance (Ciss) (Max) @ Vds：1500 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：163W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-3P
Package / Case：TO-3P-3, SC-65-3

Single FETs, MOSFETs datasheet and documents for FQA33N10

FQA33N10

Single FETs, MOSFETs Overview

The FQA33N10 is a 100V N-Channel enhancement mode power MOSFET manufactured using planar stripe DMOS technology. It features a TO-3P flange mount package with a continuous drain current of 36A at 25°C case temperature and a maximum on-resistance of 0.052Ω at VGS=10V. The device supports a pulsed drain current of 144A, operates within a junction temperature range of -55°C to +175°C, and has a power dissipation rating of 163W at 25°C.

Single FETs, MOSFETs Feature Summary

Utilizes proprietary planar stripe DMOS technology to minimize on-state resistance and enhance switching performance.
Capable of withstanding high energy pulses in avalanche and commutation modes, verified by 100% avalanche testing.
Designed for superior dv/dt capability and fast switching characteristics suitable for demanding power applications.

Single FETs, MOSFETs Applications

Audio amplifier circuits
High efficiency switching DC/DC converters
DC motor control systems

Single FETs, MOSFETs Procurement Notes

Verify the manufacturer origin as Fairchild Semiconductor International, noting that onsemi acquired Fairchild's discrete and sensor business. Confirm the specific revision status (Rev. A) and ensure the component matches the TO-3P flange mount physical dimensions. Check for authenticity markers consistent with legacy Fairchild production standards.

Single FETs, MOSFETs Selection Notes

Select this component for low-voltage applications requiring robust avalanche ruggedness and high current handling. The TO-3P package facilitates efficient heat dissipation via direct mounting to a heatsink. Ensure gate drive voltage meets the 10V requirement for optimal RDS(on) performance and verify thermal management aligns with the specified derating curves.

Single FETs, MOSFETs Part Context

This device belongs to the FQA series of QFET™ power MOSFETs. It represents an evolution in planar DMOS technology designed to balance low conduction losses with high switching speeds. The part is distinct from logic-level variants, requiring standard gate drive voltages for full enhancement.

Single FETs, MOSFETs Replacement Considerations

Direct replacements must match the 100V rating, 36A current capacity, and TO-3P package. Verify pinout compatibility (Gate, Drain, Source). Consider equivalent parts from onsemi or other manufacturers offering similar RDS(on) and thermal characteristics in a flange-mount configuration.