FQAF11N90C

Single FETs, MOSFETs Overview

The FQAF11N90C is an N-channel enhancement mode power MOSFET from onsemi, utilizing proprietary planar stripe and DMOS technology. It features a 900V drain-source voltage (V_DSS) and a continuous drain current of 7.0A at case temperature of 25°C. The device exhibits a maximum on-resistance (R_DS(on)) of 1.1Ω at V_GS = 10V and I_D = 3.5A. Key electrical characteristics include a typical gate charge of 60nC and a reverse transfer capacitance (C_rss) of 23pF. It supports a single pulse avalanche energy of 960mJ and operates within a junction temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• Utilizes onsemi's proprietary planar stripe and DMOS technology for optimized performance.
• Engineered for low on-resistance to minimize conduction losses and improve efficiency.
• Features high avalanche energy strength with 100% avalanche testing for reliability.
• Designed for fast switching capabilities through reduced gate charge and feedback capacitance.

Single FETs, MOSFETs Applications

• Switching Mode Power Supplies (SMPS)
• Active Power Factor Correction (PFC) circuits
• Electronic lamp ballasts

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against the manufacturer datasheet to ensure correct packaging and specifications. Confirm RoHS compliance status and material declarations prior to integration. Check for any recent Product Change Notifications (PCNs) regarding assembly or passivation changes. Ensure the component matches the required TO-3PF package dimensions for your PCB layout.

Single FETs, MOSFETs Selection Notes

Select this component for high-voltage applications requiring robust avalanche ruggedness. The 900V rating suits primary-side regulation and PFC stages. Evaluate thermal management requirements based on the 1.04°C/W junction-to-case thermal resistance. Compare gate charge values against driver capabilities to optimize switching frequency and loss profiles.

Single FETs, MOSFETs Part Context

This part belongs to onsemi's QFET series of power MOSFETs. It is designed as a through-hole device in a TO-3PF package. The technology focuses on balancing high breakdown voltage with low on-state resistance. It serves as a discrete solution for medium-power industrial and consumer electronics applications.

Single FETs, MOSFETs Replacement Considerations

Review onsemi datasheets for other members of the FQAF11 family or similar 900V TO-3PF devices. Verify pinout compatibility and thermal resistance parameters before substitution. Cross-reference absolute maximum ratings to ensure the alternative can handle the same stress conditions.