Single FETs, MOSFETs FQD19N10TF product image

FQD19N10TF

$0.33
  • Description:MOSFET N-CH 100V 15.6A DPAK
  • Series:QFET®
  • Mfr:onsemi
  • Package:Tape & Reel (TR)

SKU:ac73fe1ef0d0 Category: Brand:

  
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FQD19N10TF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 100V 15.6A DPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for FQD19N10TF

  • Description:MOSFET N-CH 100V 15.6A DPAK
  • Series:QFET®
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):100 V
  • Current - Continuous Drain (Id) @ 25°C:15.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:100mOhm @ 7.8A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:25 nC @ 10 V
  • Vgs (Max):±25V
  • Input Capacitance (Ciss) (Max) @ Vds:780 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):2.5W (Ta), 50W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:TO-252AA
  • Package / Case:TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for FQD19N10TF

FQD19N10TF

Single FETs, MOSFETs Overview

The FQD19N10TF is a single N-channel enhancement mode power MOSFET manufactured by onsemi. It utilizes planar stripe DMOS technology to achieve low on-state resistance and superior switching performance. The device features a drain-source breakdown voltage of 100 V and a continuous drain current of 15.6 A at case temperature. Its typical gate charge is 14 nC, with a maximum Rds(on) of 100 mOhms at Vgs = 10 V. It operates within a junction temperature range of -55°C to +175°C and is housed in a DPAK (TO-252AA) surface-mount package.

Single FETs, MOSFETs Feature Summary

  • Planar stripe DMOS technology minimizes on-state resistance for high efficiency.
  • Optimized for fast switching with low gate charge and reverse transfer capacitance.
  • 100% avalanche tested to withstand high energy pulses in commutation modes.

Single FETs, MOSFETs Applications

  • High efficiency switching DC/DC converters
  • DC motor control circuits
  • Low voltage power supply applications

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'TF' against the official onsemi datasheet to confirm tape and reel packaging specifications. Confirm RoHS compliance status and REACH SVHC declarations directly from the manufacturer's environmental documentation before integration into production schedules.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring robust 100V N-channel performance with low conduction losses. Ensure the thermal management solution supports the specified power dissipation limits in the DPAK package. Verify that the drive voltage meets the 10V requirement for optimal Rds(on) performance.

Single FETs, MOSFETs Part Context

This part belongs to the QFET family of N-channel enhancement mode power MOSFETs. It shares technological lineage with Fairchild Semiconductor devices acquired by onsemi, maintaining similar pinouts and electrical characteristics for legacy design compatibility.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes include FQD19N10LTM and FQD19N10L. Verify package compatibility and exact electrical parameter tolerances when cross-referencing with these variants.

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