FQD2N50TM

Single FETs, MOSFETs Overview

The FQD2N50TM is a single N-channel enhancement mode power MOSFET manufactured by onsemi using proprietary QFET technology. It features a maximum drain-source voltage (Vdss) of 500 V and a continuous drain current (Id) of 1.6 A at 25°C. The device exhibits a maximum on-resistance (RDS(on)) of 4.9 Ω when tested with a gate-source voltage (Vgs) of -10 V. Key electrical characteristics include a typical gate charge (Qg) of 18 nC, an input capacitance (Ciss) of 660 pF, and a reverse transfer capacitance (Crss) of 12 pF. The component is rated for a power dissipation (Pd) of 50 W and operates within a junction temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• Utilizes proprietary QFET technology to achieve low on-resistance and reduced gate charge for improved switching efficiency.
• Engineered for high avalanche energy strength with 100% avalanche testing performed during manufacturing.
• Designed as a P-channel or N-channel enhancement mode device optimized for low conduction losses.

Single FETs, MOSFETs Applications

• Switching Mode Power Supplies (SMPS)
• Active Power Factor Correction (PFC) circuits
• Electronic lamp ballasts

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix and package variant against the official datasheet to ensure compatibility with design requirements. Confirm that the source provides genuine components from authorized distribution channels. Check for any obsolescence notices or lifecycle status updates directly from onsemi documentation before finalizing procurement plans.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring a 500 V breakdown voltage with moderate current handling capabilities around 1.6 A. The low gate charge specification makes it suitable for applications prioritizing switching speed and reduced driver power consumption. Ensure the thermal management solution supports the 50 W power dissipation rating under expected operating conditions.

Single FETs, MOSFETs Part Context

This part belongs to the UniFET series of discrete power semiconductors offered by onsemi. The series focuses on delivering robust reliability and scalable performance for mission-critical power systems. These devices are engineered to meet the demands of industrial and consumer electronics markets through advanced silicon processing techniques.

Single FETs, MOSFETs Replacement Considerations

The IXTY2P50PA from Littelfuse/IXYS is listed as a potential substitute with a TO-252 package and approximately 67% similarity in specifications.

Single FETs, MOSFETs FAQ

What technology is used to manufacture the FQD2N50TM?

The device is manufactured using onsemi's proprietary QFET technology, which is designed to lower on-resistance and gate charge while enhancing switching performance.

Is the FQD2N50TM tested for avalanche capability?

Yes, the component undergoes 100% avalanche testing to ensure high avalanche energy strength and reliability under transient conditions.