FQI3P50TU

Single FETs, MOSFETs Overview

The FQI3P50TU is a P-Channel enhancement mode power MOSFET manufactured by onsemi, utilizing proprietary planar stripe DMOS technology. It features a -500V drain-source voltage rating and a continuous drain current of -2.7A at 25°C case temperature. The device exhibits a maximum static on-resistance of 4.9Ω at VGS = -10V. Key electrical parameters include a typical gate charge of 18nC and a reverse transfer capacitance of 9.5pF. It supports a single pulsed avalanche energy of 250mJ and operates within a junction temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• Utilizes advanced planar stripe DMOS technology to minimize on-state resistance and enhance switching performance.
• Capable of withstanding high energy pulses in both avalanche and commutation modes.
• Features low gate charge and low reverse transfer capacitance for efficient operation.
• Includes improved dv/dt capability and fast switching characteristics.

Single FETs, MOSFETs Applications

• Electronic lamp ballasts based on complementary half bridge topologies
• Switching applications requiring high voltage isolation
• Power conversion circuits utilizing P-channel configurations

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'TU' against official documentation to confirm tape and reel packaging specifications. Confirm that the component originates from Fairchild Semiconductor or its successor entity, as historical manufacturing data may reflect legacy branding. Ensure compatibility with I2PAK (TO-252) mounting requirements during integration.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring robust P-channel switching at 500V. Evaluate thermal management needs carefully, as power dissipation drops significantly above 25°C case temperature. Consider the avalanche energy rating if inductive load switching is present. Verify gate drive voltage levels align with the specified threshold and on-resistance conditions.

Single FETs, MOSFETs Part Context

This device belongs to the FQB/FQI series of QFET power MOSFETs originally developed by Fairchild Semiconductor. The FQI variant specifically denotes the I2PAK surface-mount package configuration. These components are engineered for high-voltage applications where reliable switching and avalanche ruggedness are critical design constraints.

Single FETs, MOSFETs Replacement Considerations

The FQB3P50 shares identical electrical specifications and serves as a direct functional equivalent, differing primarily in package style (D2PAK vs. I2PAK). Cross-reference pinout orientations between D2PAK and I2PAK packages to ensure correct board layout adaptation during substitution.