FQPF2P40

Single FETs, MOSFETs Overview

The FQPF2P40 is a P-Channel enhancement mode power MOSFET from the QFET series, manufactured by onsemi (formerly Fairchild Semiconductor). It features a TO-220F package with three pins for through-hole mounting. Key electrical parameters include a drain-source voltage of -400 V and a continuous drain current of -1.34 A at 25°C case temperature. The device exhibits a maximum static drain-source on-resistance of 6.5 Ω at VGS = -10 V. It has a typical total gate charge of 10 nC and a peak diode recovery dv/dt rating of -4.5 V/ns. Power dissipation is rated at 28 W at 25°C, with an operating junction temperature range of -55 to +150 °C.

Single FETs, MOSFETs Feature Summary

• Utilizes proprietary planar stripe DMOS technology to minimize on-state resistance and enhance switching performance.
• Capable of withstanding high energy pulses in avalanche and commutation modes, verified by 100% avalanche testing.
• Features improved dv/dt capability and low reverse transfer capacitance for fast switching applications.

Single FETs, MOSFETs Applications

• Electronic lamp ballasts utilizing complementary half bridge topology
• High voltage power switching circuits requiring robust avalanche ruggedness
• Commutation mode power conversion systems

Single FETs, MOSFETs Procurement Notes

Verify component authenticity as this part was originally produced by Fairchild Semiconductor before its acquisition by onsemi. Confirm that the specific revision matches the required datasheet specifications. Ensure the TO-220F package dimensions align with your thermal management design. Check for RoHS compliance status if environmental regulations apply to your assembly process. Validate that the sourcing channel provides traceability to original manufacturing records.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring high voltage isolation up to 400 V with moderate current handling capabilities around 1.34 A. Consider the relatively high on-resistance compared to lower voltage devices; ensure thermal derating calculations account for the 28 W power dissipation limit at 25°C case temperature. Evaluate the gate charge requirements against your driver capabilities to optimize switching speeds. Verify that the negative voltage ratings for gate-source and drain-source are compatible with your control logic levels.

Single FETs, MOSFETs Part Context

This device belongs to the QFET series of power MOSFETs, which are engineered for high-voltage applications. The series leverages advanced planar DMOS technology to balance conduction losses with switching speed. While primarily associated with Fairchild Semiconductor's historical product line, it remains documented within onsemi's portfolio resources. The TO-220F package provides a cost-effective solution for through-hole implementations where compact surface-mount options are not mandatory.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes must match the -400 V rating, P-channel configuration, and TO-220F package. Verify that any alternative device meets or exceeds the 6.5 Ω maximum RDS(on) and -1.34 A continuous current limits. Ensure compatibility with the 10 nC typical gate charge to maintain similar switching characteristics. Check for equivalent avalanche energy ratings if your application involves inductive load switching.