FQPF3N80C

Single FETs, MOSFETs Overview

The FQPF3N80C is an N-channel enhancement mode MOSFET from the QFET series, manufactured by onsemi. It features a maximum drain-source voltage of 800 V and a continuous drain current of 3 A at case temperature. The device utilizes a TO-220F package for through-hole mounting. Key electrical parameters include a maximum drain-source on-resistance of 5.5 Ω and a typical gate charge of 14 nC at 10 V. It operates within a junction temperature range of -55 °C to +175 °C.

Single FETs, MOSFETs Feature Summary

• High-voltage capability with 800 V drain-source breakdown voltage
• Enhanced switching performance via low gate charge characteristics
• Robust thermal design supporting high junction temperatures up to 175 °C

Single FETs, MOSFETs Applications

• High-voltage load switching applications
• Pulse width modulation (PWM) control circuits
• General-purpose power switching in industrial equipment

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against the official onsemi datasheet to ensure correct packaging and compliance status. Confirm that the component meets RoHS requirements if applicable to your assembly process. Cross-reference the part number with the manufacturer's current product status to check for availability or obsolescence before finalizing procurement plans.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring high voltage isolation with moderate current handling capabilities. The TO-220F package facilitates efficient heat dissipation for through-hole implementations. Ensure the gate drive voltage aligns with the specified threshold to maintain optimal on-resistance performance during operation.

Single FETs, MOSFETs Part Context

This device belongs to the QFET family, which employs charge-balanced superjunction technology. This architecture allows for reduced on-resistance and improved switching efficiency compared to traditional planar structures. The series is designed to handle extreme dv/dt rates and avalanche energy conditions effectively.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes may include other 800 V N-channel MOSFETs in TO-220 packages from onsemi or Fairchild Semiconductor, such as the FQPF6N80C or FQA7N80C, provided pinout compatibility and current ratings meet the specific circuit requirements.