G040P04M

$2.31

Description：MOSFET P-CH 40V 222A TO-263
Series：TrenchFET®
Mfr：Goford Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:1635313210e6 Category: Single FETs, MOSFETs Brand: Goford Semiconductor

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Product introduction

G040P04M is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Goford Semiconductor. Its product description is MOSFET P-CH 40V 222A TO-263. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for G040P04M

Description：MOSFET P-CH 40V 222A TO-263
Series：TrenchFET®
Mfr：Goford Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：3.5mOhm @ -15A,- 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：206 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：14983 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：178W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-263
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for G040P04M

G040P04M

Single FETs, MOSFETs Overview

The G040P04M is a P-Channel Enhancement Mode Power MOSFET manufactured by Goford Semiconductor. It utilizes advanced trench technology to achieve low gate charge and excellent on-resistance. The device features a -40V drain-source voltage rating and supports a continuous drain current of -180A at VGS = -10V. On-resistance is specified as less than 3.5mΩ at VGS = -10V and less than 4.5mΩ at VGS = -4.5V. It is packaged in a TO-263 housing.

Single FETs, MOSFETs Feature Summary

Utilizes advanced trench technology for superior performance
Provides low gate charge characteristics
Features excellent RDS(ON) values
Includes 100% avalanche testing verification

Single FETs, MOSFETs Applications

Power switches
DC/DC converters

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision (A1778.83-V1.2) matches your design requirements. Confirm that the TO-263 package dimensions align with your PCB footprint. Ensure thermal management strategies account for the junction-to-case thermal resistance provided in the specifications. Validate that the operating temperature range meets your system's environmental conditions before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component when a P-Channel MOSFET with high current capability around 180A is required. The low on-resistance makes it suitable for applications demanding high efficiency. Consider the TO-263 package for its thermal dissipation capabilities. Verify that the -40V voltage rating provides sufficient headroom for your specific circuit design needs.

Single FETs, MOSFETs Part Context

This part belongs to the power MOSFET category, specifically designed for power switching applications. It is an enhancement mode device intended for use in circuits requiring efficient control of high currents. The manufacturer specifies it for general-purpose power switching roles within electronic systems.