G080N10M

$2.31

Description：MOSFET N-CH 100V 180A TO-263
Series：-
Mfr：Goford Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:c6edf3bb4be7 Category: Single FETs, MOSFETs Brand: Goford Semiconductor

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Product introduction

G080N10M is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Goford Semiconductor. Its product description is MOSFET N-CH 100V 180A TO-263. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for G080N10M

Description：MOSFET N-CH 100V 180A TO-263
Series：-
Mfr：Goford Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：7.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：107 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：13950 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：370W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-263
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for G080N10M

G080N10M

Single FETs, MOSFETs Overview

The G080N10M is an N-Channel Enhancement Mode Power MOSFET manufactured by Goford Semiconductor. It utilizes advanced trench technology to achieve low gate charge and excellent on-resistance. The device features a drain-source voltage of 100V and a continuous drain current of 140A at 25°C case temperature. The maximum drain-source on-resistance is specified as less than 7.5mΩ at VGS=10V and less than 8mΩ at VGS=4.5V. It is housed in a TO-263 package with a junction-to-case thermal resistance of 0.53°C/W.

Single FETs, MOSFETs Feature Summary

Advanced trench technology for low gate charge and high performance
100% avalanche tested for enhanced reliability
RoHS compliant construction

Single FETs, MOSFETs Applications

Power switch applications
DC/DC converters

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision (e.g., A1798-V1.1) matches your design requirements. Confirm that the TO-263 package dimensions align with your PCB footprint. Ensure thermal management solutions account for the stated junction-to-case thermal resistance under actual operating conditions.

Single FETs, MOSFETs Selection Notes

Select this component when a 100V rating and high current handling capability are required. Consider the low on-resistance values for minimizing conduction losses in power switching circuits. Evaluate the gate charge specifications against driver capabilities to ensure efficient switching speeds.

Single FETs, MOSFETs Part Context

This part belongs to the Goford Semiconductor N-Channel Enhancement Mode Power MOSFET lineup. It is designed for general-purpose power switching applications requiring robust performance in compact surface-mount packages.