G180N06S2

FET, MOSFET Arrays Overview

The G180N06S2 is a dual N-channel enhancement mode power MOSFET manufactured by Goford Semiconductor. It utilizes advanced trench technology to achieve low on-resistance and gate charge. The device features a drain-source voltage of 60V and a continuous drain current of 8A at 25°C. Maximum on-resistance is 20mΩ at VGS=10V and 22mΩ at VGS=4.5V. Total gate charge is typically 58nC. It operates within a junction temperature range of -55°C to 150°C with a thermal resistance of 60°C/W.

FET, MOSFET Arrays Feature Summary

• Dual N-Channel Enhancement Mode Power MOSFET
• Advanced Trench Technology for Low On-Resistance
• Low Gate Charge Characteristics
• 100% Avalanche Tested

FET, MOSFET Arrays Applications

• Power switch
• DC/DC converters

FET, MOSFET Arrays Procurement Notes

Verify the specific package marking and reel quantity against official distributor catalogs before ordering. Confirm RoHS compliance status directly with the manufacturer or authorized supplier documentation. Ensure storage conditions meet moisture sensitivity level requirements prior to soldering. Validate pin assignment compatibility with target PCB footprint design.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring dual independent switches in a compact SOP-8 package. Evaluate thermal management needs based on the 60°C/W junction-to-ambient resistance rating. Consider the 60V breakdown voltage and 8A continuous current limits for circuit design margins. Verify gate drive voltage levels against the specified threshold and on-resistance curves.

FET, MOSFET Arrays Part Context

This part belongs to the Goford Semiconductor dual MOSFET family, designed for general-purpose switching applications. It serves as an alternative to single-channel configurations where space efficiency is critical. The SOP-8 Dual package allows for high-density mounting on printed circuit boards while maintaining adequate thermal performance for moderate power levels.

FET, MOSFET Arrays Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.

FET, MOSFET Arrays FAQ

What is the maximum pulsed drain current for the G180N06S2?

The maximum pulsed drain current (IDM) is 32 A.

Is the G180N06S2 avalanche tested?

Yes, the device is 100% avalanche tested.

What is the typical total gate charge (Qg)?

The typical total gate charge is 58 nC at VDD = 30V and ID = 6A.